MG6308WZ

MG6308WZ 650V 75A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 650V 75A 1.5V 512pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) High Speed Switching 4) Low Switching Loss & Soft Switching lApplication PFC UPS Welding Solar Inverter IH lOutline Wafer lInner Circuit (2) (1) (3) lAbsolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VCES VGES IC*1 ICP*2 Tj Datasheet (1) Gate (2) Collector (3) Emitter Value 650 ±30 *1) 300 -40 to +175 Unit V V A A °C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/3 2019.08 - Rev.A MG6308WZ Datasheet lDesign Assurance Parameter Symbol Conditions Reverse Bias Safe Operating Area IC = 300A, VCC = 520V, RBSOA*3 VP = 650V, VGE = 15V, RG = 100Ω, Tj = 175℃ *3 Design assurance without measurement Values Min. Typ. Max. FULL SQUARE Unit - lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package) Parameter Symbol Conditions Values Min. Typ. Max. Unit Collector - Emitter Breakdown Voltage BVCES IC = 10μA, VGE = 0V 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 μA Gate - Emitter Leakage Current IGES VGE = ±30V, VCE = 0V - - ±200 nA Gate -...