AO6808

AO6808 20V Dual N-Channel MOSFET General Description The AO6808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Product Summary VDS = 20V ID = 6A RDS(ON) = 19mΩ (typical) RDS(ON) = 20mΩ (typical) RDS(ON) = 21mΩ (typical) RDS(ON) = 23mΩ (typical) (VGS = 4.5V) (VGS = 4.5V) (VGS = 4.0V) (VGS = 3.1V) (VGS = 2.5V) TSOP6 Top View Bottom View Pin Top View S1 D1/D2 S2 1 2 3 6 G1 G1 5 D1/D2 4 G2 D1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady State Steady State Symbol RθJA RθJL 10 Sec Steady State 20 ±12 6 4.6 4.6 3.7 60 1.3 0.8 0.8 0.5 -55 to 150 Typ Max 76 95 118 150 54 68 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev.1.0: February 2014 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V 20 V IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V TJ = 55°C ...