N-Channel MOSFET. AO6808 Datasheet

AO6808 MOSFET. Datasheet pdf. Equivalent

Part AO6808
Description Dual N-Channel MOSFET
Feature AO6808 20V Dual N-Channel MOSFET General Description The AO6808 uses advanced trench technology to .
Manufacture Alpha & Omega Semiconductors
Datasheet
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AO6808
AO6808
20V Dual N-Channel MOSFET
General Description
The AO6808 uses advanced trench technology to provide excellent
RDS(ON), low gate charge and operation with gate voltages as low as
2.5V. This device is suitable for use as a load switch. It is ESD
protected.
Product Summary
VDS = 20V
ID = 6A
RDS(ON) = 19m(typical)
RDS(ON) = 20m(typical)
RDS(ON) = 21m(typical)
RDS(ON) = 23m(typical)
(VGS = 4.5V)
(VGS = 4.5V)
(VGS = 4.0V)
(VGS = 3.1V)
(VGS = 2.5V)
TSOP6
Top View
Bottom View
Pin
Top View
S1
D1/D2
S2
1
2
3
6 G1 G1
5 D1/D2
4 G2
D1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation A
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady State
Steady State
Symbol
RθJA
RθJL
10 Sec Steady State
20
±12
6 4.6
4.6 3.7
60
1.3 0.8
0.8 0.5
-55 to 150
Typ Max
76 95
118 150
54 68
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: February 2014
www.aosmd.com
Page 1 of 5



AO6808
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID = 250µA, VGS = 0V
20
V
IDSS Zero Gate Voltage Drain Current
VDS = 20V, VGS = 0V
TJ = 55°C
1
µA
5
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
VDS = 0V, VGS = ±10V
±10 µA
VDS = VGS ID = 250µA
0.5 0.75 1
V
VGS = 4.5V, VDS = 5V
60
A
VGS = 4.5V, ID = 6.0A
15 19 23
m
TJ=125°C 21 27 33
VGS = 4.0V, ID = 5.5A
15 20 25 m
VGS = 3.1V, ID = 5A
16 21 27 m
VGS = 2.5V, ID = 2A
17 23 30 m
gFS Forward Transconductance
VDS = 5V, ID = 6.0A
34 S
VSD Diode Forward Voltage
IS = 1A,VGS = 0V
0.65 1
V
IS Maximum Body-Diode Continuous Current
1.3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=10V, f=1MHz
620 780
125
pF
pF
Crss Reverse Transfer Capacitance
64 pF
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
16.2 21 nC
Qg (4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS= 10V, VDS= 10V, ID= 6A
7.7 10 nC
1.5 nC
Qgd Gate Drain Charge
2.7 nC
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
236 ns
VGS=10V, VDS=10V, RL=1.7, 448 ns
RGEN=3
9.5 µs
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs
4.1 µs
25 33 ns
Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
9 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2014
www.aosmd.com
Page 1 of 5





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