P-Channel MOSFET. AO4335 Datasheet

AO4335 MOSFET. Datasheet pdf. Equivalent

Part AO4335
Description P-Channel MOSFET
Feature AO4335 30V P-Channel MOSFET General Description The AO4335 uses advanced trench technology to provi.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO4335 Datasheet



AO4335
AO4335
30V P-Channel MOSFET
General Description
The AO4335 uses advanced trench technology to provide excellent
RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device
is suitable for use as a load switch or in PWM applications.
-RoHS Compliant
-AO4335 is Halogen Free
Product Summary
VDS = -30V
ID = -10.5A
(VGS = -20V)
RDS(ON) < 14mΩ (VGS = -20V)
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
Bottom View
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation A
TA=25°C
TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR
EAR
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady State
Steady State
Symbol
RθJA
RθJL
D
G
S
Maximum
-30
±25
-10.5
-8
-80
3.1
2.0
-20
60
-55 to 150
Typ Max
32 40
60 75
17 24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: October 2014
www.aosmd.com
Page 1 of 5



AO4335
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID = -250µA, VGS = 0V
VDS = -30V, VGS = 0V
TJ = 55°C
VDS = 0V, VGS = ±25V
VDS = VGS ID = -250µA
VGS = -10V, VDS = -5V
VGS = -20V, ID = -11A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS = -10V, ID = -10A
VGS = -5V, ID = -5A
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS = -5V, ID = -10A
IS = -1A,VGS = 0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=-15V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V)
Qgs
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-10A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.5,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
-30
-1.7
-80
0.7
-1
-5
±100
-2.3 -3
11
15
15
27
22
-0.74
14
19
18
36
-1
-3.5
1130
240
155
1.4
2.8
18 28
9.5
5.5
3.3
8.7
8.5
18
7
25
12
V
µA
nA
V
A
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2014
www.aosmd.com
Page 2 of 5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)