AO4335

AO4335 30V P-Channel MOSFET General Description The AO4335 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. -RoHS Compliant -AO4335 is Halogen Free Product Summary VDS = -30V ID = -10.5A (VGS = -20V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation A TA=25°C TA=70°C Avalanche Current B Repetitive avalanche energy 0.3mH B PD IAR EAR Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady State Steady State Symbol RθJA RθJL D G S Maximum -30 ±25 -10.5 -8 -80 3.1 2.0 -20 60 -55 to 150 Typ Max 32 40 60 75 17 24 Units V V A W A mJ °C Units °C/W °C/W °C/W Rev.1.0: October 2014 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshol...