P-Channel MOSFET
AOD423/AOI423/AOY423
30V P-Channel MOSFET
General Description
Product Summary
The AOD423/AOI423/AOY423 uses advanced ...
Description
AOD423/AOI423/AOY423
30V P-Channel MOSFET
General Description
Product Summary
The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications.
VDS ID (at VGS= -20V) RDS(ON) (at VGS= -20V) RDS(ON) (at VGS = -10V)
100% UIS Tested 100% Rg Tested
-30V -70A < 6.2mΩ < 8mΩ
(< 6.7mΩ∗) (< 8.5mΩ∗)
Top View D
TO252 DPAK
Bottom View
D
TO-251A IPAK
TO251B (IPAK short lead)
Top View
Bottom View
DD
D
S
G
Orderable Part Number
AOD423 AOI423 AOY423
G S
S
D G
G
D S
G
S
Package Type
TO-252 TO-251A TO-251B
Form
Tape & Reel Tube Tube
Minimum Order Quantity
2500 4000 4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum -30 ±25 -70 -67 -200 -15 -12 -50 125 90 45 2.5 1.6
-55 to 175
Units V V
A
A A mJ W
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA...
Similar Datasheet