P-Channel MOSFET. AOY423 Datasheet

AOY423 MOSFET. Datasheet pdf. Equivalent

Part AOY423
Description P-Channel MOSFET
Feature AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary The AOD423/AOI423/A.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOY423 Datasheet



AOY423
AOD423/AOI423/AOY423
30V P-Channel MOSFET
General Description
Product Summary
The AOD423/AOI423/AOY423 uses advanced trench
technology to provide excellent RDS(ON), low gate charge
and low gate resistance. With the excellent thermal
resistance of the DPAK/IPAK package, this device is well
suited for high current load applications.
VDS
ID (at VGS= -20V)
RDS(ON) (at VGS= -20V)
RDS(ON) (at VGS = -10V)
100% UIS Tested
100% Rg Tested
-30V
-70A
< 6.2m
< 8m
(< 6.7m)
(< 8.5m)
Top View
D
TO252
DPAK
Bottom View
D
TO-251A IPAK
TO251B (IPAK short lead)
Top View
Bottom View
DD
D
S
G
Orderable Part Number
AOD423
AOI423
AOY423
G
S
S
D
G
G
D
S
G
S
Package Type
TO-252
TO-251A
TO-251B
Form
Tape & Reel
Tube
Tube
Minimum Order Quantity
2500
4000
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±25
-70
-67
-200
-15
-12
-50
125
90
45
2.5
1.6
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16
41
0.9
Max
20
50
1.6
Units
°C/W
°C/W
°C/W
* package TO251A, TO251B
Rev.1.0: August 2014
www.aosmd.com
Page 1 of 6



AOY423
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
Min Typ Max Units
ID=-250µA, VGS=0V
-30
V
VDS=-30V, VGS=0V
TJ=55°C
-1
µA
-5
VDS=0V, VGS= ±25V
±100 nA
VDS=VGS ID=-250µA
-1.5 -2.5 -3.5 V
VGS=-10V, VDS=-5V
-200
A
VGS=-20V, ID=-20A
TO252
TJ=125°C
5.1 6.2
m
7.6 9.2
VGS=-10V, ID=-20A
TO252
6.2 8 m
VGS=-20V, ID=-20A
TO251A, TO251B
VGS=-10V, ID=-20A
TO251A, TO251B
5.6 6.7 m
6.7 8.5 m
gFS Forward Transconductance
VDS=-5V, ID=-20A
VSD Diode Forward Voltage
IS=-1A,VGS=0V
IS Maximum Body-Diode Continuous CurrentG
42
-0.7 -1
-70
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2760
550
375
1.5 3 6.0
pF
pF
pF
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, ID=-20A
VGS=-10V, VDS=-15V, RL=0.75,
RGEN=3
45 65 nC
10 nC
12 nC
13 ns
23 ns
35 ns
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
26 ns
15 ns
30 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2014
www.aosmd.com
Page 2 of 6





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