AOT10T60

AOT10T60/AOTF10T60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10T60 & AOTF10T60 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V For Halogen Free add "L" suffix to part number: AOT10T60L & AOTF10T60L 100% UIS Tested 100% Rg Tested TO-220 D Top View TO-220F 700V 40A < 0.7Ω 23nC 3.4µJ D AOT10T60 DS G AOTF10T60 S GD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT10T60 Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C,J Repetitive avalanche energy C,J Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VDS VGS ID IDM IAR EAR EAS dv/dt 10 6.6 TC=25°C Power Dissipation B Derate above 25oC PD 208 1.7 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RθJA RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. AOT10T60 65 0.5 0.6 G S AOTF10T60 600 ±3...