N-Channel MOSFET. AOTF10T60 Datasheet

AOTF10T60 MOSFET. Datasheet pdf. Equivalent

Part AOTF10T60
Description N-Channel MOSFET
Feature AOT10T60/AOTF10T60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10T60 & A.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOTF10T60 Datasheet



AOTF10T60
AOT10T60/AOTF10T60
600V,10A N-Channel MOSFET
General Description
Product Summary
The AOT10T60 & AOTF10T60 are fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
For Halogen Free add "L" suffix to part number:
AOT10T60L & AOTF10T60L
100% UIS Tested
100% Rg Tested
TO-220
D
Top View
TO-220F
700V
40A
< 0.7
23nC
3.4µJ
D
AOT10T60
DS
G
AOTF10T60
S
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT10T60
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C,J
Repetitive avalanche energy C,J
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
VDS
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
10
6.6
TC=25°C
Power Dissipation B Derate above 25oC
PD
208
1.7
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT10T60
65
0.5
0.6
G
S
AOTF10T60
600
±30
10*
6.6*
40
10
50
480
50
5
43
0.34
-55 to 150
AOTF10T60L
10*
6.6*
32
0.26
300
AOTF10T60
65
--
2.9
AOTF10T60L
65
--
3.9
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.4.0: April 2014
www.aosmd.com
Page 1 of 7



AOTF10T60
AOT10T60/AOTF10T60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=5A
VDS=40V, ID=5A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
Rg Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=10A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=10A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
600
700
V
0.55
V/ oC
1
µA
10
±100 nΑ
3 45V
0.6 0.7
9S
0.74 1
V
10 A
40 A
1346
54
40
pF
pF
pF
72 pF
10 pF
3.8
23 35
6.9
6.7
37
60
53
35
477
6.7
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4A, VDD=150V, RG=25, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: April 2014
www.aosmd.com
Page 2 of 7





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