N-Channel MOSFET. AOT10T60P Datasheet

AOT10T60P MOSFET. Datasheet pdf. Equivalent

Part AOT10T60P
Description N-Channel MOSFET
Feature AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description • Trench Power AlphaMO.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOT10T60P Datasheet



AOT10T60P
AOT10T60P/AOB10T60P/AOTF10T60P
600V,10A N-Channel MOSFET
General Description
• Trench Power AlphaMOS-II technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
Applications
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer,
and Telecom
Product Summary
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-220
D
Top View
TO-220F
TO-263
D2PAK
D
700V
40A
< 0.7Ω
26nC
3.5µJ
D
AOT10T60P
S
D
G
AOTF10T60P
GD S
G
AOB10T60P
S
G
S
Orderable Part Number
AOT10T60PL
AOB10T60PL
AOTF10T60P
AOTF10T60PL
Package Type
TO-220 Green
TO-263 Green
TO-220F Pb Free
TO-220F Green
Form
Tube
Tape & Reel
Tube
Tube
Minimum Order Quantity
1000
800
1000
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT(B)10T60P
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt J
VDS
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
10
6.6
TC=25°C
Power Dissipation B Derate above 25°C
PD
208
1.7
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
AOTF10T60P
600
±30
10*
6.6*
40
10
50
480
50
15
43
0.3
-55 to 150
300
AOTF10T60PL
10*
6.6*
33
0.26
Units
V
V
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOT(B)10T60P
65
0.5
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.6
AOTF10T60P
65
--
2.9
AOTF10T60PL
65
--
3.8
Units
°C/W
°C/W
°C/W
Rev.2.0: March 2014
www.aosmd.com
Page 1 of 7



AOT10T60P
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
BVDSS
/∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=5A
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=40V, ID=5A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=100V, f=1MHz
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
Rg Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=480V, ID=10A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=10A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=10A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
600
3
V
700
0.56
V/ oC
1
µA
10
±100 nA
4.3 5
V
0.58 0.7
8.8 S
0.74 1
V
10 A
40 A
1595
56
42
pF
pF
pF
74 pF
11 pF
1.7 Ω
26 40 nC
8.1 nC
8.2 nC
42 ns
54 ns
52 ns
24 ns
497 ns
7.3 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. ISD≤ID, di/dt≤200A/µs, VDD=400V, TJ≤TJ(MAX).
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: March 2014
www.aosmd.com
Page 2 of 7





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