N-Channel MOSFET
AOT10T60P/AOB10T60P/AOTF10T60P
600V,10A N-Channel MOSFET
General Description
• Trench Power AlphaMOS-II technology • Lo...
Description
AOT10T60P/AOB10T60P/AOTF10T60P
600V,10A N-Channel MOSFET
General Description
Trench Power AlphaMOS-II technology Low RDS(ON) Low Ciss and Crss High Current Capability RoHS and Halogen Free Compliant
Applications
General Lighting for LED and CCFL AC/DC Power supplies for Industrial, Consumer, and Telecom
Product Summary
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
TO-220 D
Top View TO-220F
TO-263 D2PAK
D
700V 40A < 0.7Ω 26nC 3.5µJ
D
AOT10T60P
S D G
AOTF10T60P
GD S
G AOB10T60P
S
G
S
Orderable Part Number
AOT10T60PL AOB10T60PL AOTF10T60P AOTF10T60PL
Package Type
TO-220 Green TO-263 Green TO-220F Pb Free TO-220F Green
Form
Tube Tape & Reel
Tube Tube
Minimum Order Quantity
1000 800 1000 1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol AOT(B)10T60P
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C L=1mH
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt J
VDS VGS
ID
IDM IAR EAR EAS
dv/dt
10 6.6
TC=25°C Power Dissipation B Derate above 25°C
PD
208 1.7
Junction and Storage Temperature Range
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds
TJ, TSTG TL
AOTF10T60P 600 ±30 10* 6.6* 40 10 50 480 50 15 43 0.3
-55 to 150
300
AOTF10T60PL 10* 6.6*
33 0.26
Units V V
A
A mJ mJ V/ns W W/°C °C
°C
Thermal Characteris...
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