N-Channel MOSFET. AO4854 Datasheet

AO4854 MOSFET. Datasheet pdf. Equivalent

Part AO4854
Description Dual N-Channel MOSFET
Feature AO4854 30V Dual N-channel MOSFET General Description Product Summary The AO4854 uses advanced tre.
Manufacture Alpha & Omega Semiconductors
Datasheet
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AO4854
AO4854
30V Dual N-channel MOSFET
General Description
Product Summary
The AO4854 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
RDS(ON) (at VGS = 4V)
ESD Protected
100% UIS Tested
100% Rg Tested
30V
8A
<19m
< 23m
< 26m
Top View
SOIC-8
Bottom View
Top View
S2 1
G2 2
S1 3
G1 4
8
7
6
5
D2
D2
D1
D1
G
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
8
6.5
48
19
18
2
1.3
-55 to 150
D
G
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
D
S
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev3 : Nov 2010
www.aosmd.com
Page 1 of 6



AO4854
AO4854
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
10 µA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.2 1.8 2.4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8A
VGS=4.5V, ID=4A
TJ=125°C
15.5 19
21 25
18.5 23
m
m
VGS=4V, ID=4A
20.5 26 m
gFS Forward Transconductance
VDS=5V, ID=8A
30 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.75 1
V
IS Maximum Body-Diode Continuous Current
2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
600 740 888
77 110 145
50 82 115
0.5 1.1 1.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12 15 18 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=8A
6 7.5 9 nC
2 2.5 3 nC
Qgd Gate Drain Charge
2 3 5 nC
tD(on)
Turn-On DelayTime
5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.8, 3.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
19 ns
tf Turn-Off Fall Time
3.5 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs
6 8 10 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14 18 22 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: Nov 2010
www.aosmd.com
Page 2 of 6





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