RFN3BGE2S

Super Fast Recovery Diode RFN3BGE2S Datasheet Series Standard Fast Recovery Dimensions (Unit : mm) Land size figure (Unit : mm) 6.0 3.0 2.0 6.0 Application General rectification 1.6 1.6 Features 1) Low switching loss 2) High current overload capacity ROHM : TO-252GE JEITA : - TO-252 2.3 2.3 Structure Cathode Construction Silicon epitaxial planar type Taping specifications (Unit : mm) Open Anode Absolute maximum ratings (at Ta= 25°C unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.5 200 V Reverse voltage Average rectified foward current Peak forward surge current Junction temperature VR Io IFSM Tj Reverse direct voltage 60Hz half sin waveform, resistive load 60Hz half sin waveform, non-repetitive, Tj=25°C - 200 V 3A 40 A 150 °C Storage temperature Tstg - 55 ～ 150 °C Electrical characteristics (at Tj= 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=3A - 0.90 0.98 V Reverse current IR VR=200V - - 10 A Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR - 12 25 ns Thermal resistance(1) (1) Value is guaranteed by design Rth(j-c) Junction to case - - 6 °C / W www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. 1/4 2020/03/10_Rev.001 RFN3BGE2S Electrical Characteristic Curves Datasheet FORWARD CURRENT : IF(A) 100 10 1 Tj = 150°C Tj = 125°C 0.1 Tj = 75°C 0.01 0 Tj = 25°C 200 400 600 800 1000 1...