Recovery Diode. RFN3BGE2S Datasheet

RFN3BGE2S Diode. Datasheet pdf. Equivalent

RFN3BGE2S Datasheet
Recommendation RFN3BGE2S Datasheet
Part RFN3BGE2S
Description Super Fast Recovery Diode
Feature RFN3BGE2S; Super Fast Recovery Diode RFN3BGE2S Datasheet Series Standard Fast Recovery Dimensions (Unit : .
Manufacture ROHM
Datasheet
Download RFN3BGE2S Datasheet




ROHM RFN3BGE2S
Super Fast Recovery Diode
RFN3BGE2S
Datasheet
Series
Standard Fast Recovery
Dimensions (Unit : mm)
Land size figure (Unit : mm)
6.0
Application
General rectification
1.6 1.6
Features
1) Low switching loss
2) High current overload capacity
ROHM : TO-252GE
JEITA : -
TO-252
2.3 2.3
Structure
Cathode
Construction
Silicon epitaxial planar type
Taping specifications (Unit : mm)
Open Anode
Absolute maximum ratings (at Ta= 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
200 V
Reverse voltage
Average rectified foward current
Peak forward surge current
Junction temperature
VR
Io
IFSM
Tj
Reverse direct voltage
60Hz half sin waveform,
resistive load
60Hz half sin waveform,
non-repetitive, Tj=25°C
-
200 V
3A
40 A
150 °C
Storage temperature
Tstg
- 55 150 °C
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF IF=3A - 0.90 0.98 V
Reverse current
IR
VR=200V
- - 10 A
Reverse recovery time
trr IF=0.5A,IR=1A,Irr=0.25×IR - 12 25 ns
Thermal resistance(1)
(1) Value is guaranteed by design
Rth(j-c)
Junction to case
- - 6 °C / W
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© 2020 ROHM Co., Ltd. All rights reserved.
1/4
2020/03/10_Rev.001



ROHM RFN3BGE2S
RFN3BGE2S
Electrical Characteristic Curves
Datasheet
100
10
1 Tj = 150°C
Tj = 125°C
0.1 Tj = 75°C
0.01
0
Tj = 25°C
200 400 600 800 1000 1200 1400 1600
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
Tj = 150°C
Tj = 125°C
Tj = 75°C
10 Tj = 25°C
1
0.1
0
50 100 150
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
200
1000
100
f = 1MHz
Ta = 25°C
1000
100
IFSM
8.3ms 8.3ms
1cyc.
10
1
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
10
Tj = 25°C
1
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
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© 2020 ROHM Co., Ltd. All rights reserved.
2/4
2020/03/10_Rev.001



ROHM RFN3BGE2S
RFN3BGE2S
Electrical Characteristic Curves
Datasheet
1000
100
Tj = 25°C
10
IFSM
time
1
1 10 100
TIME : t(ms)
IFSM-t CHARACTERISTICS
5.0
4.5 D.C.
4.0
3.5 D = 0.5
0A Io
0V
t
VR
D=t/T
T VR=VRmax
Tj=150°C
3.0
half sin wave
2.5
2.0 D = 0.2
1.5
D = 0.1
1.0
0.5
0.0
0
30 60 90 120 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
100
Rth(j-a)
10
Rth(j-c)
1
0.1
0.001 0.01 0.1 1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
5.0
4.5 D.C.
4.0
3.5 D = 0.5
3.0
half sin wave
2.5
2.0 D = 0.2
1.5
1.0 D = 0.1
0.5
0.0
0
30 60
0A Io
0V
t
VR
D=t/T
T VR=VRmax
Tj=150°C
90 120 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
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© 2020 ROHM Co., Ltd. All rights reserved.
3/4
2020/03/10_Rev.001





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