Signal MOSFET. RQ6E045SN Datasheet

RQ6E045SN MOSFET. Datasheet pdf. Equivalent

RQ6E045SN Datasheet
Recommendation RQ6E045SN Datasheet
Part RQ6E045SN
Description Small Signal MOSFET
Feature RQ6E045SN; .
Manufacture ROHM
Datasheet
Download RQ6E045SN Datasheet




ROHM RQ6E045SN
RQ6E045SN
  Nch 30V 4.5A Small Signal MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
38mΩ
±4.5A
1.25W
lFeatures
1) Low on - resistance
2) Built-in G-S protection diode
3) Small surface mount package(TSMT6)
4) Pb-free lead plating ; RoHS compliant
lOutline
SOT-457T
SC-95
TSMT6
 
      
lInner circuit
   Datasheet
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
180
lApplication
Switching
Type Tape width (mm)
Quantity (pcs)
8
3000
Taping code
TR
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
QL
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
ID ±4.5 A
Pulsed drain current
IDP*1 ±18 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*2 1.25 W
PD*3 0.95 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                              
                                                                                        
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.003    



ROHM RQ6E045SN
RQ6E045SN
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                    
Symbol
RthJA*2
RthJA*3
Values
Min. Typ. Max.
- - 100
- - 132
Unit
/W
/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage
temperature coefficient
 ΔV(BR)DSS  ID = 1mA
   ΔTj     referenced to 25
Zero gate voltage
drain current
IDSS VDS = 30V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage
temperature coefficient
VGS(th) VDS = 10V, ID = 1mA
 ΔVGS(th)   ID = 1mA
   ΔTj     referenced to 25
Static drain - source
on - state resistance
VGS = 10V, ID = 4.5A
RDS(on)*4 VGS = 4.5V, ID = 4.5A
VGS = 4.0V, ID = 4.5A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer
Admittance
|Yfs|*4 VDS = 10V, ID = 4.5A
Values
Unit
Min. Typ. Max.
30 - - V
- 29 - mV/
- - 1 μA
- - ±10 μA
1.0 - 2.5 V
- -1.6 - mV/
- 27 38
- 36 51 mΩ
- 40 56
- 6-Ω
3.5 - - S
*1 Pw10μs , Duty cycle1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
                                             
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/11
                                          
20190527 - Rev.003



ROHM RQ6E045SN
RQ6E045SN
      
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*4
tr*4
td(off)*4
tf*4
VGS = 0V
VDS = 10V
f = 1MHz
VDD 15V,VGS = 10V
ID = 2.25A
RL 6.67Ω
RG = 10Ω
        
Datasheet
Values
Min. Typ. Max.
- 520 -
- 150 -
- 95 -
- 12 -
- 19 -
- 41 -
- 14 -
Unit
pF
ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg*4
Qgs*4
Qgd*4
VDD 15V,
ID = 4.5A,
VGS = 5V
Values
Min. Typ. Max.
- 6.8 9.5
- 1.6 -
- 2.3 -
Unit
nC
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
Conditions
IS
ISP*1
VSD*4
Ta = 25
VGS = 0V, IS = 1.0A
Min.
-
-
-
Values
Typ.
-
-
-
Max.
1.0
18
1.2
Unit
A
A
V
                                                                                          
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
3/11
20190527 - Rev.003







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)