Power MOSFET. R6006PND3FRA Datasheet

R6006PND3FRA MOSFET. Datasheet pdf. Equivalent

R6006PND3FRA Datasheet
Recommendation R6006PND3FRA Datasheet
Part R6006PND3FRA
Description Power MOSFET
Feature R6006PND3FRA; R6006PND3FRA   Nch 600V 6A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 600V 1.2Ω ±6.0A 87W.
Manufacture ROHM
Datasheet
Download R6006PND3FRA Datasheet




ROHM R6006PND3FRA
R6006PND3FRA
  Nch 600V 6A Power MOSFET
   Datasheet
VDSS
RDS(on)(Max.)
ID
PD
600V
1.2Ω
±6.0A
87W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Drive circuits can be simple
4) Pb-free plating ; RoHS compliant
5) AEC-Q101 Qualified
lOutline
DPAK
TO-252
 
      
lInner circuit
 
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type Tape width (mm)
Quantity (pcs)
16
2500
Taping code
TL
Marking
R6006PND3
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
600 V
Continuous drain current (Tc = 25°C)
ID*1 ±6.0 A
Pulsed drain current
IDP*2 ±24 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 3.0 A
Avalanche energy, single pulse
EAS*3
2.4 mJ
Power dissipation (Tc = 25°C)
PD*4 87 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
                                                                                        
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20191113 - Rev.002    



ROHM R6006PND3FRA
R6006PND3FRA
          
lThermal resistance
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
                Datasheet
                    
Symbol
RthJC*4
RthJA*5
Tsold
Values
Unit
Min. Typ. Max.
- - 1.43 /W
- - 100 /W
- - 265
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate resistance
IDSS VDS = 600V, VGS = 0V
IGSS
VGS(th)
VGS = ±30V, VDS = 0V
VDS = 10V, ID = 1mA
RDS(on)*6 VGS = 10V, ID = 3.0A
RG f = 1MHz, open drain
Values
Unit
Min. Typ. Max.
600 - - V
- - 100 μA
- - ±100 nA
2.5 - 4.5 V
- 0.9 1.2 Ω
- 8.9 - Ω
                                                                                         
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20191113 - Rev.002



ROHM R6006PND3FRA
R6006PND3FRA
          
                Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on)*6
tr*6
td(off)*6
tf*6
VGS = 0V
VDS = 25V
f = 1MHz
VDD 300V, VGS = 10V
ID = 3.0A
RL 100Ω
RG = 10Ω
Values
Min. Typ. Max.
- 460 -
- 370 -
- 24 -
- 22 -
- 36 -
- 50 -
- 35 -
Unit
pF
ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Qg*6
Qgs*6
Qgd*6
V(plateau)
VDD 300V
ID = 6.0A
VGS = 10V
VDD 300V, ID = 6.0A
Values
Min. Typ. Max.
- 15 -
-4-
-7-
- 5.9 -
Unit
nC
V
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L 500μH, VDD = 50V, RG = 25Ω, starting Tj = 25°C Fig.3-1,3-2
*4 Tc=25
*5 Mounted on an epoxy PCB FR4 (20×20×0.8mm)
*6 Pulsed
                                                                                         
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© 2019 ROHM Co., Ltd. All rights reserved.
3/11
20191113 - Rev.002







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