Digital Transistor. DTC014EEB Datasheet

DTC014EEB Transistor. Datasheet pdf. Equivalent

Part DTC014EEB
Description Digital Transistor
Feature DTC014E series NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet Para.
Manufacture ROHM
Datasheet
Download DTC014EEB Datasheet



DTC014EEB
DTC014E series
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
Value
50V
100mA
10kΩ
10kΩ
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 10kΩ
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
 for operation, making the circuit design easy.
4) Complementary PNP Types: DTA014E series
lOutline
SOT-723
SOT-416FL
  
DTC014EM
DTC014EEB
(VMT3)
(EMT3F)
SOT-323FL
             
 
 
  
DTC014EUB
(UMT3F)
 
 
              
lInner circuit
lApplication
INVERTER, INTERFACE, DRIVER
lPackaging specifications
Part No.
Package
Package
size
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTC014EM
SOT-723
(VMT3)
1212
T2L
180
8
8000
40
DTC014EEB SOT-416FL 1616
TL
180
8
3000
40
(EMT3F)
SOT-323FL
DTC014EUB (UMT3F) 2021
TL
180
8
3000
40
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/7
20160222 - Rev.003



DTC014EEB
DTC014E series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
DTC014EM
Power dissipation
DTC014EEB
DTC014EUB
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCC
VIN
IO
IC(MAX)*1
PD*2
Tj
Tstg
Values
50
40 to -10
50
100
150
150
200
150
-55 to +150
Unit
V
V
mA
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 5mA
IO = 5mA, II = 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 10V, IO = 5mA
-
-
f
*1
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
Values
Min. Typ. Max.
- - 0.8
2.6 -
-
- 50 150
- - 880
- - 500
35 -
-
7 10 13
0.8 1.0 1.2
Unit
V
mV
μA
nA
-
-
- 250 - MHz
                                            
 
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/7
                                        
20160222 - Rev.003





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