SCS302AP

SCS302AP SiC Schottky Barrier Diode VR 650V IF 2A QC 6nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability Construction Silicon carbide epitaxial planar type Outline TO-220ACP (1) Datasheet Inner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Packing code Marking Tube 50 C9 SCS302AP Absolute maximum ratings (Tj = 25°C) Parameter Symbol Reverse voltage (repetitive peak) VRM Reverse voltage (DC) VR Continuous forward current (Tc= 145°C) IF Surge nonrepetitive forward current PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C Repetitive peak forward current i2t value 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C IFSM IFRM ∫i2dt Total power disspation PD Junction temperature Tj Range of storage temperature Tstg *1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C Value 650 650 2 19 16 70 12 *1 1.8 1.2 22 *2 175 55 to 175 Unit V V A A A A A A2s A2s W °C °C www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/5 2017.07 - Rev.B SCS302AP Datasheet Electrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. DC blocking voltage VDC IR =10.8A IF=2A,Tj=25°C 650 - - - 1.35 1.50 Forward voltage VF IF=2A,Tj=150°C - 1.44 1.71 IF=2A,Tj=175°C - 1.50 - VR=650V,Tj=25°C - 0.0065 10.8 Reve...