AOT280L

AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary The AOT280L/AOB280L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested 80V 140A < 2.7mΩ < 3.5mΩ (< 2.2mΩ∗) (< 3.1mΩ∗) Top View D AOT280L TO220 Bottom View D Top View AOB280L TO-263 Bottom View D D G DS S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C IDSM IAS EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G Maximum 80 ±20 140 110 560 20.5 16 70 735 333 166.5 2.1 1.3 -55 to 175 G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 12 48 0.35 Max 15 60 0.45 * Surface mount package TO263 D G S Unit...