N-Channel MOSFET. AOT2500L Datasheet

AOT2500L MOSFET. Datasheet pdf. Equivalent

Part AOT2500L
Description N-Channel MOSFET
Feature AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary The AOT2500L/AOB2500L.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOT2500L Datasheet



AOT2500L
AOT2500L/AOB2500L
150V N-Channel MOSFET
General Description
Product Summary
The AOT2500L/AOB2500L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized
due to an extremely low combination of RDS(ON), Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=6V)
100% UIS Tested
100% Rg Tested
150V
152A
< 6.5m
< 7.6m
(< 6.2m)
(<7.3m)
Top View
TO220
Bottom View
D
D
Top View
D
TO-263
D2PAK
Bottom View
D
G
DS
AOT2500L
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.3mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S
G AOB2500L
Maximum
150
±20
152
107
440
11.5
9.0
65
634
375
187.5
2.1
1.3
-55 to 175
G
G
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
48
0.26
Max
15
60
0.4
* Surface mount package TO263
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.1. 0: July 2013
www.aosmd.com
Page 1 of 6



AOT2500L
AOT2500L/AOB2500L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance
Conditions
Min Typ Max Units
ID=250µA, VGS=0V
VDS=150V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGSID=250µA
VGS=10V, ID=20A
TO220
VGS=6V, ID=20A
TO220
VGS=10V, ID=20A
TO263
150
TJ=55°C
2.3
TJ=125°C
2.8
5.4
10.2
5.9
5.1
1
5
±100
3.5
6.5
12.3
7.6
6.2
V
µA
nA
V
m
m
m
VGS=6V, ID=20A
TO263
5.6 7.3 m
gFS Forward Transconductance
VDS=5V, ID=20A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
70
0.66
1
152
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=75V, f=1MHz
6460
586
pF
pF
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
22 pF
1 2.1 3.2
SWITCHING PARAMETERS
Qg(10V)
Qgs
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=75V, ID=20A
97 136 nC
22.5
nC
Qgd Gate Drain Charge
17 nC
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=75V, RL=3.75,
RGEN=3
18.5
20
67.5
ns
ns
ns
tf Turn-Off Fall Time
14 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
90 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
1090
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1. 0: July 2013
www.aosmd.com
Page 2 of 6





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