Document
AO6424A
30V N-Channel MOSFET
General Description
• Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Application
• System/Load Switch
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
30V 6.5A < 35mΩ < 48mΩ
TSOP6
Top View
Bottom View
Top View
D
Pi n 1
D1 D2 G3
6D 5D 4S
G S
Orderable Part Number
AO6424A
Package Type
TSOP-6
Form
Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
TA=25°C Power Dissipation B TA=70°C
VGS ID IDM PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 6.5 5 27 2.5 1.5
-55 to 150
Units V V
A
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 42 68 23
Max 50 85 30
Units °C/W °C/W °C/W
Rev.1.0: October 2013
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Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS IDSS IGSS VGS(th)
RDS(ON)
gFS VSD IS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=30V, VGS=0V
Gate-Body leakage current Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=5A
VGS=4.5V, ID=4A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz f=1MHz
SWITCHING PARAMETERS
Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr
Total Gate Charge
Total Gate Charge Gate Source Charge
VGS=10V, VDS=15V, ID=5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time Turn-Off DelayTime
VGS=10V, VDS=15V, RL=3Ω, RGEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
Min 30 1.2
1.4
Typ
1.8 29 44 38 8 0.76
270 50 35 2.8
6.3 3.2 0.65 1.75 3 2.5 17.5 2.5 10 2.3
Max Units
1 5 ±100 2.4 35 53 48
1 3
V
µA
nA V
mΩ
mΩ S V A
pF pF pF 4.2 Ω
12 nC 8 nC
nC nC ns ns ns ns
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2013
www.aosmd.com
Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 10V
7V
15
4.5V 20 10
VDS=5V
ID(A)
ID (A)
4V
10 3.5V
VGS=3V 0
012345
VDS (Volts) Figure 1: On-Region Characteristics (Note E)
60
125°C 5
25°C
0 0123456
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
1.8
Normalized On-Resistance
50
VGS=4.5V 40
1.6 VGS=10V ID=5A
1.4
RDS(ON) (mΩ)
30 20 VGS=10V
1.2
VGS=4.5V ID=4A 1
RDS(ON) (mΩ)
10 02468
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
100 ID=5A
80
0.8 0
25 50 75 100 125 150 175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00 1.0E-01
125°C
IS (A)
60 125°C
40
25°C
20 2 4 6 8 10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-02 1.0E-03
25°C
1.0E-04
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Rev.1.0: October 2013
www.aosmd.com
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=15V ID=5A 8
500 400
6 300
Ciss
Capacitance (pF)
VGS (Volts)
4 200
ID (Amps)
2
0 0246
Qg (nC) Figure 7: Gate-Charge Characteristics
8
100.0
10.0
RDS(ON.