N-Channel MOSFET. AO6424A Datasheet

AO6424A MOSFET. Datasheet pdf. Equivalent

Part AO6424A
Description N-Channel MOSFET
Feature AO6424A 30V N-Channel MOSFET General Description • Latest Trench Power MOSFET technology • Very Low.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO6424A Datasheet



AO6424A
AO6424A
30V N-Channel MOSFET
General Description
• Latest Trench Power MOSFET technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• System/Load Switch
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
30V
6.5A
< 35m
< 48m
TSOP6
Top View
Bottom View
Top View
D
Pi n 1
D1
D2
G3
6D
5D
4S
G
S
Orderable Part Number
AO6424A
Package Type
TSOP-6
Form
Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
TA=25°C
Power Dissipation B TA=70°C
VGS
ID
IDM
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
6.5
5
27
2.5
1.5
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
42
68
23
Max
50
85
30
Units
°C/W
°C/W
°C/W
Rev.1.0: October 2013
www.aosmd.com
Page 1 of 5



AO6424A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS, ID=250µA
VGS=10V, ID=5A
VGS=4.5V, ID=4A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=3,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
Min
30
1.2
1.4
Typ
1.8
29
44
38
8
0.76
270
50
35
2.8
6.3
3.2
0.65
1.75
3
2.5
17.5
2.5
10
2.3
Max Units
1
5
±100
2.4
35
53
48
1
3
V
µA
nA
V
m
m
S
V
A
pF
pF
pF
4.2
12 nC
8 nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: October 2013
www.aosmd.com
Page 2 of 5





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