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AO6424A Dataheets PDF



Part Number AO6424A
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description N-Channel MOSFET
Datasheet AO6424A DatasheetAO6424A Datasheet (PDF)

AO6424A 30V N-Channel MOSFET General Description • Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • System/Load Switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 6.5A < 35mΩ < 48mΩ TSOP6 Top View Bottom View Top View D Pi n 1 D1 D2 G3 6D 5D 4S G S Orderable Part Number AO6424A Package Type TSOP-6 Form Minimum Order Quantity Tape .

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AO6424A 30V N-Channel MOSFET General Description • Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • System/Load Switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 6.5A < 35mΩ < 48mΩ TSOP6 Top View Bottom View Top View D Pi n 1 D1 D2 G3 6D 5D 4S G S Orderable Part Number AO6424A Package Type TSOP-6 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 6.5 5 27 2.5 1.5 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 42 68 23 Max 50 85 30 Units °C/W °C/W °C/W Rev.1.0: October 2013 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=5A VGS=4.5V, ID=4A Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Total Gate Charge Gate Source Charge VGS=10V, VDS=15V, ID=5A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=3Ω, RGEN=3Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs Min 30 1.2 1.4 Typ 1.8 29 44 38 8 0.76 270 50 35 2.8 6.3 3.2 0.65 1.75 3 2.5 17.5 2.5 10 2.3 Max Units 1 5 ±100 2.4 35 53 48 1 3 V µA nA V mΩ mΩ S V A pF pF pF 4.2 Ω 12 nC 8 nC nC nC ns ns ns ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2013 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 7V 15 4.5V 20 10 VDS=5V ID(A) ID (A) 4V 10 3.5V VGS=3V 0 012345 VDS (Volts) Figure 1: On-Region Characteristics (Note E) 60 125°C 5 25°C 0 0123456 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance 50 VGS=4.5V 40 1.6 VGS=10V ID=5A 1.4 RDS(ON) (mΩ) 30 20 VGS=10V 1.2 VGS=4.5V ID=4A 1 RDS(ON) (mΩ) 10 02468 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 100 ID=5A 80 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 1.0E+00 1.0E-01 125°C IS (A) 60 125°C 40 25°C 20 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev.1.0: October 2013 www.aosmd.com Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=15V ID=5A 8 500 400 6 300 Ciss Capacitance (pF) VGS (Volts) 4 200 ID (Amps) 2 0 0246 Qg (nC) Figure 7: Gate-Charge Characteristics 8 100.0 10.0 RDS(ON.


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