P-Channel MOSFET. AO6407 Datasheet

AO6407 MOSFET. Datasheet pdf. Equivalent

Part AO6407
Description P-Channel MOSFET
Feature January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AO6407 Datasheet



AO6407
January 2003
AO6407
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6407 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = -20V
ID = -5 A
RDS(ON) < 45m(VGS = -4.5V)
RDS(ON) < 60m(VGS = -2.5V)
RDS(ON) < 85m(VGS = -1.8V)
TSOP6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±8
-5.5
-4.5
-30
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
47.5
74
37
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AO6407
AO6407
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-16V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-5A
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-2A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=2.0,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
Min
-20
-0.3
-25
7
Typ Max Units
-0.55
-1
-5
±100
-1
34
48
46
61
14
-0.78
45
60
60
85
-1
-2.2
V
µA
nA
V
A
m
m
m
S
V
A
1180
176
142
15
pF
pF
pF
13 nC
1.2 nC
3.6 nC
13.2 ns
21 ns
93 ns
46 ns
43 ns
21 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.





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