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AO6407 Dataheets PDF



Part Number AO6407
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description P-Channel MOSFET
Datasheet AO6407 DatasheetAO6407 Datasheet (PDF)

January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 60mΩ (VGS = -2.5V) RDS(ON) < 85mΩ (VGS = -1.8V) TSOP6 Top View D 16 D D 25 D G 34 S D G S Absolute Maximum Ratings TA=2.

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January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 60mΩ (VGS = -2.5V) RDS(ON) < 85mΩ (VGS = -1.8V) TSOP6 Top View D 16 D D 25 D G 34 S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -5.5 -4.5 -30 2 1.44 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 Units V V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-16V, VGS=0V Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-5A Static Drain-Source On-Resistance VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-2A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-5A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=-4.5V, VDS=-10V, RL=2.0Ω, RGEN=3Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs Min -20 -0.3 -25 7 Typ Max Units -0.55 -1 -5 ±100 -1 34 48 46 61 14 -0.78 45 60 60 85 -1 -2.2 V µA nA V A mΩ mΩ mΩ S V A 1180 176 142 15 pF pF pF Ω 13 nC 1.2 nC 3.6 nC 13.2 ns 21 ns 93 ns 46 ns 43 ns 21 nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO6407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -8V -4.5V 20 -3.0V -2.5V 15 -2.0V 10 8 6 VDS=-5V -ID(A) -ID (A) 10 4 125°C 5 VGS=-1.5V 2 25°C RDS(ON) (mΩ) 0 0 80 60 40 1234 -VDS (Volts) Fig 1: On-Region Characteristics VGS=-1.8V VGS=-2.5V 5 VGS=-4.5V 20 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance 0 0 1.6 1.4 1.2 0.5 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 2 ID=-5A, VGS=-4.5V ID=-3A, VGS=-1.8V ID=-4A, VGS=-2.5V 1 0.8 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 175 RDS(ON) (mΩ) 100 90 80 ID=-5A 70 60 50 40 25°C 30 125°C 20 02468 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -IS (A) 1.0E+01 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 Alpha & Omega Semiconductor, Ltd. AO6407 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VDS=-10V ID=-5A 4 2000 1600 3 1200 Ciss Capacitance (pF) -VGS (Volts) 2 1 0 0 3 6 9 12 15 -Qg (nC) Figure 7: Gate-Charge Characteristics 800 400 Coss 0 Crss 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 -ID (Amps) 100.0 TJ(Max)=150°C TA=25°C 10.0 RDS(ON) limited 10µs 100µs 1ms 0.1s 10ms 1.0 1s 10s DC 0.1 0.1 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 Power (W) 40 TJ(Max)=150°C TA=25°C 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5.


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