N-Channel MOSFET. AON6260 Datasheet

AON6260 MOSFET. Datasheet pdf. Equivalent

Part AON6260
Description N-Channel MOSFET
Feature AON6260 60V N-Channel MOSFET General Description Product Summary The AON6260 uses trench MOSFET t.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AON6260 Datasheet



AON6260
AON6260
60V N-Channel MOSFET
General Description
Product Summary
The AON6260 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
60V
85A
< 2.4m
< 3.5m
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
85
67
340
41
33
65
211
104
41.5
7.3
4.7
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14
40
1
Max
17
55
1.2
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: July 2013
www.aosmd.com
Page 1 of 6



AON6260
AON6260
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
IDSS Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.5 2.0 2.5
V
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
1.95
3.15
2.4
3.9
m
VGS=4.5V, ID=20A
2.8 3.5 m
gFS Forward Transconductance
VDS=5V, ID=20A
105 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current G
0.7 1
85
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
f=1MHz
5578
1390
75
0.3 0.75 1.2
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
81 115 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=20A
37 52 nC
17 nC
Qgd Gate Drain Charge
12 nC
tD(on)
Turn-On DelayTime
13.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5, 8 ns
tD(off)
Turn-Off DelayTime
RGEN=3
50 ns
tf Turn-Off Fall Time
11.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
30 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
130 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2013
www.aosmd.com
Page 2 of 6





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)