P-Channel MOSFET. MCM1216 Datasheet

MCM1216 MOSFET. Datasheet pdf. Equivalent

Part MCM1216
Description P-Channel MOSFET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download MCM1216 Datasheet



MCM1216
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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MCM1216
Features
Advanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking:1216
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Parameter
VDS Drain-source Voltage
Rating
-12
ID Drain Current-Continuous
-16
IDM Pulsed Drain Current (note1)
-65
VGS Gate-source Voltage
f8
PD
R©JA
R©JC
Power Dissipation(note2,Ta=25oC)
Maximum Power Dissipation(note3,Tc=25oC)
Thermal Resistance Junction to Ambient(note4)
Thermal Resistance Junction to Case(note4)
2.5
18
50
6.9
TJ Operating Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
Unit
V
A
A
V
W
к/W
к/W
к
к
Notes:
1. Repetit e Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25.
3. This test is performed with infinite heat sink at Tc=25.
4. Surface m nted on FR4 board, t≤10S.
Equivalent Circuit
P-Channel
Power MOSFET
DFN2020-6J
D
E
A
C
B
L
J
N
K
H
F
M
G
1.DRAIN
2.DRAIN
3.GATE
4.SOURCE
5.DRAIN
6.DRAIN
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Dimensions
INCHES
MIN
0.028
MAX
.032
0.008REF.
0000
0.002
0.076
0.076
0.082
0.082
0.031
0.033
0.039
0.041
0.008
0.008
0.016
---
0.018
0.026
0.026TYP.
0.010
0.014
0.007
0.013
MM
MIN MAX
0.700
0.800
0.203REF.
0.000
0.050
1.924
2.076
1.924
2.076
0.800
1.000
0.850
1.050
0.200
0.400
0.200
---
0.460
0.660
0.650TYP.
0.250
0.350
0.174
0326
NOTE
Revision: A
www.mccsemi.com
1 of 4
2016/02/03



MCM1216
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
MCC
R
Micro Commercial Components
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On Characteristics (note 5)
Gate-Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Symbol
Test Condition
V(BR)DSS
IGSS
IDSS
VGS = 0V, ID =-250µA
VDS =0V, VGS =±8V
VDS =-12V, VGS =0V
VGS(th)
RDS(on)
gFS
VDS =VGS, ID =-250µA
VGS =-4.5V, ID = -6.7A
VGS =-2.5V, ID =-6.2A
VDS =-10V, ID =-6.7A
Ciss
Coss
Crss
Qg
VDS =-10V,VGS =0V,f =1MHz
VDS =-6V,VGS =-8V,ID =-10A
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Current (note 5)
Diode Forward Voltage(note 4)
Qgs VDS =-6V,VGS =-4.5V,ID =-10A
Qgd
IS
VSD VGS =0V, ISD=-8A
Notes:
5. Pulse Test: Pulse With ≤300μs,Duty Cycle≤2%.
6. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-12 V
±100 nA
-1 µA
-0.4 -0.7
40
-1
21
27
V
mΩ
S
2700
680
590
60
35
5
10
100
48
pF
nC
-16 A
-1.2 V
Revision: A
www.mccsemi.com
2 of 4
2016/02/03





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