MOSFET. MCMNP517 Datasheet

MCMNP517 MOSFET. Datasheet pdf. Equivalent

Part MCMNP517
Description MOSFET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download MCMNP517 Datasheet



MCMNP517
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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MCMNP517
Features
Halogen free available upon request by adding suffix "-HF"
Super High Density Cell Design for Extremely Low RDS(ON)
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking:517
Maximum ratings ( Ta=25unless otherwise noted)
N and P-Channel
Enhancement Mode
Field Effect Transistor
DFN2020-6U
Parameter
Symbol N-Channel P-Channel Unit
D
C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (NOTE1)
VDS
VGS
ID
12
±12
6.0
-12 V
±12 V
-4.1 A
A
E
B
Pulsed Drain Current
Continous Source-Drain Diode Current
Thermal Resistance from
Junction to Ambient (NOTE1)
Operating Junction Temperature
Storage Temperature
IDM
IS
RθJA
TJ
TSTG
24 -16.4
6 -4.1
167
150
-55 ~+150
A
A
/W J
L
K
G
FF
Notes :
1.Surface mounted on FR4 board using the minimum recommended pad size.
H
Equivalent Circuit
4 56
D2 D1
321
DIM
A
B
C
D
E
F
G
H
J
K
L
Dimensions
INCHES
MM
MIN
0.028
MAX
.035
0.008REF.
0000
0.002
0.076
0.076
0.020
0.035
0.082
0.082
0.028
0.043
0.010
0.008
0.014
---
0.007
0.013
0.026TYP.
MIN MAX
0.700
0.900
0.203REF.
0.000
0.050
1.924
1.924
2.076
2.076
0.520
0.720
0.900
1.100
0.250
0.350
0.200
---
0.174
0.326
0.650TYP.
NOTE
Revision: B
www.mccsemi.com
1 of 6
2017/11/30



MCMNP517
MCC
R
Micro Commercial Components
026)(7(/(&75,&$/&+$5$&7(5,67,&6
N-ch MOSFET ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise noted)
Parameter
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage (note 2)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
Drain-source on-resistance(note 2)
RDS(on)
Forward tranconductance(note 2)
gFS
Diode forward voltage
VSD
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Output Capacitance
Ciss
Coss
Reverse Transfer Capacitance
Crss
SWITCHING CHARACTERISTICS (note 3,4)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
Test Condition
VGS = 0V, ID =250µA
VDS =16V,VGS = 0V
VGS =±12V, VDS = 0V
VDS =VGS, ID =250µA
VGS =10V, ID =6A
VGS =4.5V, ID =5A
VGS =2.5V, ID =4A
VGS =1.8V, ID =2A
VDS =5V, ID =3.8A
IS=1A, VGS = 0V
VDS =10V,VGS =0V,f =1MHz
VGS=5V,VDS=10V,
RGEN=6Ω,RL=1.7Ω
VDS=10V,ID=6A,
VGS=10V
Min Typ
12
0.5
4
630
164
137
5.5
14
29
10.2
12
1
2
Max
1
±100
1
24
27
42
74
1
Unit
V
µA
nA
V
m
m
m
m
S
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Revision: B
www.mccsemi.com
2 of 6
2017/11/30





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