MCM1206

MCM1206 Features Advanced Trench MOSFET Process Technology Ultra Low On-Resistance with Low Gate Charge Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55°C to +150°C Storage Temperature Range: -55°C to +150°C Thermal Resistance: 556°C/W Junction to Ambient Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Volltage VGS ±8 V Continuous Drain Current Pulsed Drain Current(Note 1) ID -6 A IDM -20 A Total Power Dissipation PD 350 mW Note 1. Repetitive Rating: Pluse Width Limited by Junction Temperature. Internal Structure DDS 6 54 1 23 DDG Marking: 1206 P-CHANNEL MOSFET DFN2020-6J * ' + ) ( 2 4 0 4 4 1 . 4 , 3 4 DIMENSIONS DIM INCHES MIN MAX MM MIN MAX A 0.028 0.032 0.700 0.800 B 0.008 0.203 C 0.000 0.002 0.000 0.050 D 0.076 0.082 1.924 2.076 E 0.076 0.082 1.924 2.076 F 0.031 0.039 0.800 1.000 G 0.033 0.041 0.850 1.050 H 0.008 0.016 0.200 0.400 J 0.008 ----- 0.200 ----- K 0.018 0.026 0.460 0.660 L 0.026 0.650 M 0.010 0.014 0.250 0.350 N 0.007 0.013 0.174 0.326 NOTE TYP. TYP. Rev.3-1-01012019 1/4 MCCSEMI.COM Electrical Characteristics @ 25°C (Unless Otherwise Specified) Parameter Symbol Test Conditions Static Characteristics Drain-Source Breakdown Voltage ...