P-Channel MOSFET. MCM1206 Datasheet

MCM1206 MOSFET. Datasheet pdf. Equivalent

Part MCM1206
Description P-Channel MOSFET
Feature MCM1206 Features • Advanced Trench MOSFET Process Technology • Ultra Low On-Resistance with Low Gat.
Manufacture MCC
Datasheet
Download MCM1206 Datasheet



MCM1206
MCM1206
Features
• Advanced Trench MOSFET Process Technology
• Ultra Low On-Resistance with Low Gate Charge
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 556°C/W Junction to Ambient
Parameter
Symbol Rating Unit
Drain-Source Voltage
VDS -12 V
Gate-Source Volltage
VGS ±8 V
Continuous Drain Current
Pulsed Drain Current(Note 1)
ID -6 A
IDM -20 A
Total Power Dissipation
PD 350 mW
Note 1. Repetitive Rating: Pluse Width Limited by Junction Temperature.
Internal Structure
DDS
6 54
1 23
DDG
Marking: 1206
P-CHANNEL
MOSFET
DFN2020-6J
*
'
+
)
(
2
4
0
4
4
1
.
4
-
,
3 4
DIMENSIONS
DIM
INCHES
MIN MAX
MM
MIN MAX
A 0.028 0.032 0.700 0.800
B 0.008
0.203
C 0.000 0.002 0.000 0.050
D 0.076 0.082 1.924 2.076
E 0.076 0.082 1.924 2.076
F 0.031 0.039 0.800 1.000
G 0.033 0.041 0.850 1.050
H 0.008 0.016 0.200 0.400
J 0.008 ----- 0.200 -----
K 0.018 0.026 0.460 0.660
L 0.026
0.650
M 0.010 0.014 0.250 0.350
N 0.007 0.013 0.174 0.326
NOTE
TYP.
TYP.
Rev.3-1-01012019
1/4
MCCSEMI.COM



MCM1206
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA
Gate-Source Leakage Current
IGSS VDS=0V, VGS =±8V
Zero Gate Voltage Drain Current
IDSS VDS=-50V, VGS=0V
Gate-Threshold Voltage(Note 2)
VGS(th) VDS=VGS, ID=-250µA
Drain-Source On-Resistance(Note 2)
RDS(on)
VGS=-4.5V, ID=-3.5A
VGS=-2.5V, ID=-3A
VGS=-1.8V, ID=-2A
Diode Forward Voltage
VSD VGS=0V, IS=-3.3A
Forward Transconductance(Note 2)
gFS VDS=-5V, ID=-4.1A
Dynamic Characteristics(Note 3)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Switching Characteristics(Note 3)
VDS=-4V,VGS=0V,f=1MHz
Total Gate Charge
VDS=-4V,VGS=-4.5V,ID=-4.1A
Qg
Gate-Source Charge
Qgs VDS=-4V,VGS=-2.5V,ID=-4.1A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f=1MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=-4V,
RL=1.2Ω, ID-3.3A,
VGEN=-4.5V,Rg=1Ω
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=-4V,
RL=1.2Ω, ID-3.3A,
VGEN=-8V,Rg=1Ω
Turn-Off Fall Time
tf
Note: 2. Pulse Test : Pulse Width300μs, Duty Cycle2%.
3. Guaranteed by Design, Not Subject to Production Testing.
MCM1206
Min Typ Max Unit
-12 V
±100
nA
-1 µA
-0.5 -0.9 V
30 45
40 60
60 90
-1.2 V
6S
740
290 pF
190
7.8 15
4.5 9
nC
1.2
1.6
1.4 7 14
Ω
13 20
35 53
32 48
10 20
ns
5 10
11 17
22 33
16 24
Rev.3-1-01012019
2/4
MCCSEMI.COM





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