P-Channel MOSFET. MCM2301C Datasheet

MCM2301C MOSFET. Datasheet pdf. Equivalent

Part MCM2301C
Description Dual P-Channel MOSFET
Feature Features • High Speed Switching • High Density Cell Design For Low RDS(ON) • Lead Free Finish/RoHS C.
Manufacture MCC
Total Page 4 Pages
Datasheet
Download MCM2301C Datasheet



MCM2301C
Features
High Speed Switching
• High Density Cell Design For Low RDS(ON)
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
MCM2301C
Dual
P-Channel Mosfet
Maximum Ratings
Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range : -55°C to +150°C
• Thermal Resistance : 62.5°C/W Junction to Ambient
Parameter
Symbol
Value
Drain-source Voltage
VDS -20V
Gate-source Volltage
VGS ±10V
Drain Current
TA=25°C
TA=70°C
ID
-4.4A
-3.2A
Pulsed Drain Current(1)
IDM -18A
Total Power Dissipation@ TA=25°C
PD
2W
Note :1. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
Circuit and Pin Schematic
D1
6
G2 S2
54
1
S1
23
G1 D2
D2
D2
G1
S1
Pin1
S2
G2
D1
D1
Marking: 2301C
DFN2020-6LA
D JC
F 45 6
H
EG
32
1
B
A
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.016 0.024 0.400 0.600
B 0.000 0.002 0.000 0.050
C 0.039 0.014 0.250 0.350
D 0.075 0.083 1.900 2.100
E 0.075 0.083 1.900 2.100
F 0.006 0.014 0.150 0.350
G 0.035 0.043 0.890 1.090
H 0.019 0.027 0.490 0.690
J 0.026 BSC. 0.650 BSC.
NOTE
Rev.3-1-01012019
1/4
MCCSEMI.COM



MCM2301C
MCM2301C
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Static Parameter
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA
Gate-Threshold Voltage
VGS(th) VDS=VGS, ID=-250µA
Gate-Body Leakage Current
IGSS VDS =0V, VGS =± 20V
Zero Gate Voltage Drain Current
IDSS VDS =-20V, VGS =0V
VGS=-4.5V, ID=-2.9A
Drain-Source On-Resistance
RDS(on) VGS=-2.5V, ID=-2.9A
VGS=-1.8V, ID=-2.9A
Diode Forward Voltage
VSD VGS=0V, IS=-4.4A
Dynamic Parameters
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Ciss
Coss
Crss
VDS=-10V,VGS=0Vdc, f=1MHz
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS=-4.5V,VDS=-10V,ID=-4.4A
VGS=-4.5V,VDD=-10V,ID=-1A,
RGEN=2.5Ω
Min
-20V
-0.4
Typ
-0.7
49
59
79
-0.8
478
81
51
4.3
0.8
1.1
12
54
15
9
Max Unit
-1.0
±100
-1
64
80
95
-1.2
V
V
nA
μA
V
pF
nC
ns
Rev.3-1-01012019
2/4
MCCSEMI.COM





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