Pseudomorphic HEMT. ATF-54143 Datasheet

ATF-54143 HEMT. Datasheet pdf. Equivalent

Part ATF-54143
Description Pseudomorphic HEMT
Feature ATF-54143 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Surface Mount Plastic Package Data Sh.
Manufacture AVAGO
Total Page 17 Pages
Datasheet
Download ATF-54143 Datasheet



ATF-54143
ATF-54143
Low Noise Enhancement Mode ­Pseudomorphic HEMT
in a ­Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF‑54143 is a high dynamic range,
low noise, E-PHEMT housed in a 4‑lead SC-70 (SOT‑343)
surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF-54143 ideal for cellular/PCS base
stations, MMDS, and other systems in the 450 MHz to 6
GHz frequency range.
Surface Mount Package SOT-343
Pin Connections and Package Marking
DRAIN
SOURCE
SOURCE
GATE
Note:
Top View. Package marking provides orientation and identification
“4F” = Device Code
“x” = Date code character
identifies month of manufacture.
Attention:
Observe precautions for handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Agilent Application Note A004R:
Electrostatic Discharge Damage and Control.
Features
High linearity performance
Enhancement Mode Technology[1]
Low noise figure
Excellent uniformity in product specifications
800 micron gate width
Low cost surface mount small plastic package SOT-
343 (4 lead SC-70)
Tape-and-Reel packaging option available
Lead-free option available.
Specifications
2 GHz; 3V, 60 mA (Typ.)
36.2 dBm output 3rd order intercept
20.4 dBm output power at 1 dB gain compression
0.5 dB noise figure
16.6 dB associated gain
Applications
Low noise amplifier for cellular/PCS base stations
LNA for WLAN, WLL/RLL and MMDS applications
General purpose discrete ­­­E­‑PHEMT for other ultra
low noise applications
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.



ATF-54143
ATF-54143 Absolute Maximum Ratings [1]
Symbol
Parameter
Absolute
Units Maximum
VDS
Drain - Source Voltage[2]
V
5
VGS
Gate - Source Voltage[2]
V -5 to 1
VGD
Gate Drain Voltage [2]
V -5 to 1
IDS
Drain Current[2]
mA
120
Pdiss
Total Power Dissipation[3]
mW
725
Pin max.
RF Input Power
dBm
20[5]
IGS
Gate Source Current
mA
2[5]
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C -65 to 150
θjc
Thermal Resistance [4]
°C/W
162
Notes:
1. Operation of this device in excess of any one of these parameters
may cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 6.2 mW/°C for TL > 33°C.
4. Thermal resistance measured using 150°C Liquid Crystal Measure‑
ment method.
5. The device can handle +20 dBm RF Input Power provided IGS is
limited to 2 mA. IGS at P1dB drive level is bias circuit dependent.
See application section for additional information.
120
100
80
60
40
20
0.7 V
0.6 V
0.5 V
0.4 V
0.3 V
0
0 12 3 45 6 7
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
Product Consistency Distribution Charts[6, 7]
160
120
80 -3 Std
40
Cpk = 0.77
Stdev = 1.41
200
160
120
80
40
-3 Std
Cpk = 1.35
Stdev = 0.4
+3 Std
160
120
80
40
Cpk = 1.67
Stdev = 0.073
+3 Std
0
30 32
34 36 38
OIP3 (dBm)
40
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
42
0
14 15 16 17 18
GAIN (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
19
0
0.25 0.45 0.65 0.85
NF (dB)
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
1.05
Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been de-embedded from actual measurements.






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)