N-Channel MOSFET
AOT2916L/AOTF2916L
100V N-Channel MOSFET
General Description
Product Summary
The AOT2916L & AOTF2916L uses trench MOS...
Description
AOT2916L/AOTF2916L
100V N-Channel MOSFET
General Description
Product Summary
The AOT2916L & AOTF2916L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
100V 23A / 17A < 34mΩ < 43.5mΩ
D
G
AOT2916L
DS G
AOTF2916L
S GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
AOT2916L
AOTF2916L
100
±20
23 17
16 12
50
5
4
8
3
41.5 23.5
20.5 11.5
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
AOT2916L 15 60 3.6
AOTF2916L 15 60 6.4
S
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °...
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