N-Channel MOSFET. AOTF2916L Datasheet

AOTF2916L MOSFET. Datasheet pdf. Equivalent

Part AOTF2916L
Description N-Channel MOSFET
Feature AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary The AOT2916L & AOTF2.
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOTF2916L Datasheet



AOTF2916L
AOT2916L/AOTF2916L
100V N-Channel MOSFET
General Description
Product Summary
The AOT2916L & AOTF2916L uses trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized due
to an extremely low combination of RDS(ON), Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
100V
23A / 17A
< 34m
< 43.5m
D
G
AOT2916L
DS
G
AOTF2916L
S
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
AOT2916L
AOTF2916L
100
±20
23 17
16 12
50
5
4
8
3
41.5 23.5
20.5 11.5
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT2916L
15
60
3.6
AOTF2916L
15
60
6.4
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Oct. 2012
www.aosmd.com
Page 1 of 7



AOTF2916L
AOT2916L/AOTF2916L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=100V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGSID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A
VGS=4.5V, ID=3A
Forward Transconductance
VDS=5V, ID=10A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
100
1.6
50
2
28
51
35
28
0.75
1
5
±100
2.7
34
62
43.5
1
23
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
870 pF
68 pF
3.5 pF
7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12.5 20 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=10A
5.5 10 nC
2.5 nC
Qgd Gate Drain Charge
2 nC
tD(on)
Turn-On DelayTime
7.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=5,
3.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
23 ns
tf Turn-Off Fall Time
5.5 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs
20 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
88 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Oct. 2012
www.aosmd.com
Page 2 of 7





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