Rev 2: Oct 2004
AOB420, AOB420L (Green Product) N-Channel Enhancement Mode Field Effect Transistor
General Description...
Rev 2: Oct 2004
AOB420, AOB420L (Green Product) N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. AOB420L (Green Product) is offered in a Lead Free package.
Features
VDS (V) = 30V ID = 110A RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 10.0mΩ (VGS = 4.5V)
TO-263 D2-PAK
Top View Drain Connected to Tab
GD S
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current B,G
TC=25°C G TC=100°C B
VGS ID
Pulsed Drain Current Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM IAR EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±20 110 65 200 30 120 100 50 3.1 2
-55 to 175
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 8.1 33 1
Max 12 40 1.5
Alpha & Omega Semiconductor, Ltd.
Units V V
A
A mJ W
W °C
Units °C/W °C/W °C/W
AOB420, AOB420L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
...
