N-Channel MOSFET. AOB420L Datasheet

AOB420L MOSFET. Datasheet pdf. Equivalent

Part AOB420L
Description N-Channel MOSFET
Feature Rev 2: Oct 2004 AOB420, AOB420L (Green Product) N-Channel Enhancement Mode Field Effect Transistor .
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOB420L Datasheet



AOB420L
Rev 2: Oct 2004
AOB420, AOB420L (Green Product)
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB420 uses advanced trench technology to
provide excellent RDS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
AOB420L (Green Product) is offered in a Lead Free
package.
Features
VDS (V) = 30V
ID = 110A
RDS(ON) < 6.5m(VGS = 10V)
RDS(ON) < 10.0m(VGS = 4.5V)
TO-263
D2-PAK
Top View
Drain Connected
to Tab
GD S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B,G
TC=25°C G
TC=100°C B
VGS
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
110
65
200
30
120
100
50
3.1
2
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
8.1
33
1
Max
12
40
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W



AOB420L
AOB420, AOB420L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=55°C
1
5
µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5 2.15 2.5
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
110
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=30A
TJ=125°C
5.05
7.7
6.5
11
m
VGS=4.5V, ID=30A
8.2 10 m
gFS Forward Transconductance
VDS=5V, ID=30A
60 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.72 1
V
IS Maximum Body-Diode Continuous Current
110 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1320
533
154
0.95
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=30A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.5,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
25.5 nC
13.3 nC
3.2 nC
6.7 nC
7.7 ns
28 ns
22.2 ns
20.7 ns
30.7 ns
21.8 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on steady-state RθJA and the maximum allowed junction temperature of 150°C. The value in any a given application
depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.





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