P-Channel MOSFET. SI2301A Datasheet

SI2301A MOSFET. Datasheet pdf. Equivalent

Part SI2301A
Description P-Channel MOSFET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download SI2301A Datasheet



SI2301A
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
SI2301A
Features
Halogen free available upon request by adding suffix "-HF"
-20V,-2.8A, RDS(ON)=120mΩ@VGS=-4.5V
RDS(ON)=150mΩ@VGS=-2.5V
High dense cell design for extremely low RDS(ON)
Rugged and reliable
High Speed Switching
SOT-23 Package
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
PD
RθJA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambientb
Operating Junction Temperature
Storage Temperature
Rating
-20
-2.8
-10
±8
1.0
125
-55 to +150
-55 to +150
Internal Block Diagram
D
G
S
Unit
V
A
A
V
W
/W
P-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
CB
2. SOURCE
3. DRAIN
12
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .104
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: B
www.mccsemi.com
1 of 5
2018/04/04



SI2301A
MCC
R
Micro Commercial Components
SI2301A
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 8V, VDS = 0V
VGS = -8V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = -250µA
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VDS = -5V, ID = -2.8A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = -6V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -6V, ID = -1A,
VGS = -4.5V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = -6V, ID = -2.8A,
VGS = -4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = -0.75A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Min
-20
-0.5
Typ
-0.7
80
110
8
880
270
175
11
5
32
23
11
1.5
2.1
Max Units
-1
100
-100
V
µA
nA
nA
-0.9 V
120 m
150 m
S
pF
pF
pF
20 ns
10 ns
65 ns
45 ns
14.5 nC
nC
nC
-0.75
-1.2
A
V
Revision: B
www.mccsemi.com
2 of 5
2018/04/04





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)