Dual-Channel MOSFET. SIL2308 Datasheet

SIL2308 MOSFET. Datasheet pdf. Equivalent

Part SIL2308
Description Dual-Channel MOSFET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Total Page 6 Pages
Datasheet
Download SIL2308 Datasheet



SIL2308
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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SIL2308
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS
Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• Low Input/Output Leakage
• Marking Code: 2038
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
VGS
R©JA
TJ
TSTG
Parameter
Drain-source Voltage
N-Channel
P-Channel
Drain Current-Continuous
N-Channel
Gate-source Voltage
P-Channel
N-Channel
P-Channel
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
20
-20
5
-4
±8
±12
277
-55 to +150
-55 to +150
Unit
V
A
V
к/W
к
к
Equivalent Circuit
Dual
N&P-Channel MOSFET
SOT23-6L
G
6 54
1 23
BC
A
H
KM
J
D
L
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX NOTE
A .012 .020 0.30 0.50
B
.051
.070
1.30
1.80
C
.087
.126
2.20
3.20
D .037
0.95BSC
G .074
1.90BSC
H
.106
.122
2.70
3.10
J
.002
.006
0.05
0.15
K
.035
.051
0.90
1.30
L .012 .024 0.30 0.60
M
.003
.008
0.08
0.22
Revision: A
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1 of 6
2018/05/26



SIL2308
MCC
R
Micro Commercial Components
Electrical characteristics - N-Channel Q1 (TA=25 oC, unless otherwise noted)
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =20V,VGS = 0V
Gate-body leakage current
IGSS VGS =±12V, VDS = 0V
Gate threshold voltage
VGS(th) VDS =VGS, ID =250µA
Drain-source on-resistance
RDS(on)
VGS =4.5V, ID =4.5A
VGS =2.5V, ID =3.5A
Forward transconductance
gFS VDS =5V, ID =7A
Diode forward voltage
VSD IS=1.7A,VGS=0V
Dynamic characteristics
Total gate charge
Qg
Gate-source charge
Qgs VDS =10V,VGS =4.5V,ID =4A
Gate-drain charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss VDS=8V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=10V , VGS=4V , ID=1A
RG=10Ω
Turn-off fall time
tf
Notes : 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
Min. Typ. Max. Unit
20 V
1 µA
±0.1 µA
0.5 0.7
1
V
38
mΩ
45
9S
0.7 1.3
V
11
2.3 nC
2.5
800
155 pF
125
18
5
ns
43
20
Revision: A
www.mccsemi.com
2 of 6
2018/05/26





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