Dual-Channel MOSFET. SIL2308 Datasheet

SIL2308 MOSFET. Datasheet pdf. Equivalent

SIL2308 Datasheet
Recommendation SIL2308 Datasheet
Part SIL2308
Description Dual-Channel MOSFET
Feature SIL2308; Features • Low Input/Output Leakage • Exceptional ON Resistance and Maximum DC Current Capability • .
Manufacture MCC
Datasheet
Download SIL2308 Datasheet




MCC SIL2308
Features
Low Input/Output Leakage
• Exceptional ON Resistance and Maximum DC Current Capability
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Maximum Thermal Resistance: 119°C/W Junction to Ambient(Note)
Parameter
N-Channel
Drain-Source Voltage
Gate-Source Volltage
Continuous Drain Current
P-Channel
Drain-Source Voltage
Gate-Source Volltage
Continuous Drain Current
Symbol Rating Unit
VDS
20
V
VGS
±8
V
ID
5
A
VDS
-20
V
VGS
±12
V
ID
-4
A
Note:Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Internal Structure
D1
S1
D2
6
5
4
1
G1
2
S2
3
G2
Marking:2038
SIL2308
Dual
N&P-Channel
MOSFET
SOT23-6L
G
654
1 23
BC
A
H
K
M
J
D
L
DIMENSIONS
DIM
INCHES
MIN MAX
MM
MIN MAX
A 0.012 0.020 0.30 0.50
B 0.051 0.070 1.30 1.80
C 0.087 0.126 2.20 3.20
D
0.037
0.95
G
0.074
1.90
H 0.106 0.122 2.70 3.10
J 0.002 0.006 0.05 0.15
K 0.030 0.051 0.75 1.30
L 0.012 0.024 0.30 0.60
M 0.003 0.008 0.08 0.22
NOTE
TYP.
TYP.
Rev.3-2-01012019
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MCC SIL2308
SIL2308
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
N-Channel
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±12V, VDS = 0V
Gate threshold voltage
VGS(th) VDS =VGS, ID =250µA
Drain-source on-resistance(Note 1)
RDS(on)
VGS =4.5V, ID =4.5A
VGS =2.5V, ID =3.5A
Forward transconductance
gFS
VDS =5V, ID =7A
Diode forward voltage
VSD
IS=1.7A,VGS=0V
Dynamic characteristics(Note 2)
Total gate charge
Qg
Gate-source charge
Qgs
VDS =10V,VGS =4.5V,ID =4A
Gate-drain charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss VDS=8V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics(Note 2)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=10V , VGS=4V , ID=1A
RG=10Ω
Turn-off fall time
tf
Notes : 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
20
V
1
µA
±0.1 µA
0.5 0.7
1
V
38
mΩ
45
9
S
0.7 1.3
V
11
2.3
nC
2.5
800
155
pF
125
18
5
ns
43
20
Rev.3-2-01012019
2/6
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MCC SIL2308
SIL2308
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
P-Channel
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-16V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±12V, VDS = 0V
Gate threshold voltage
VGS(th) VDS =VGS, ID = -250µA
Drain-source on-resistance(Note 1)
Forward transconductance
Dynamic characteristics(Note 2)
RDS(on)
gFS
VGS = -4.5V, ID = -0.5A
VGS = -2.5V, ID = - 0.5A
VDS =-5V, ID = -2A
Input Capacitance
Ciss
Output Capacitance
Coss VDS=-10V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
f =1MHz
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS =-10V,VGS =-2.5V,ID=-3A
Gate-Drain Charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=-10V,VGEN=-4.5V,ID=-1A
RL=10Ω,RGEN=1Ω
Turn-off fall time
tf
Source-Drain Diode characteristics
Diode Forward voltage
VSD
VGS =0V, IS=-1.25A
Notes : 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
Min
-20
-0.5
5
Typ
-0.7
70
90
405
75
55
6
3.3
0.7
1.3
11
35
30
10
-0.7
Max Unit
V
-1
µA
±100 nA
-1
V
90
mΩ
110
S
pF
12
nC
ns
-1.3 V
Rev.3-2-01012019
3/6
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