N-Channel MOSFET. SI2324A Datasheet

SI2324A MOSFET. Datasheet pdf. Equivalent

Part SI2324A
Description N-Channel MOSFET
Feature MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley,.
Manufacture MCC
Total Page 4 Pages
Datasheet
Download SI2324A Datasheet



SI2324A
MCC
R
Micro Commercial Components
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
SI2324A
Features
Halogen free available upon request by adding suffix "-HF"
TrenchFET Power Mosfet
Low RDS(ON)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
N-Channel
Enhancement Mode
Field Effect Transistor
Maximum Ratings @ 25 C Unless Otherwise Specified
Symbol
Parameter
Rating
VDS
ID
PD
VGS
RθJA
TJ
TSTG
Drain-source Voltage
Continuous Drain Current
Total Power Dissipation
Gate-source Voltage
Thermal Resistance from Junction to Ambient
Operating Junction Temperature
Storage Temperature
100
2
1.2
±20
105
-55 to +150
-55 to +150
NOTE 1. Repetitive ratingPluse width limited by junction temperature.
Unit
V
A
W
V
/W
Internal Block Diagram
Marking:1002
SOT-23
A
D
3
1.GATE
CB
2. SOURCE
3. DRAIN
12
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .104
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1 of 4
2018/05/13



SI2324A
SI2324A
Electrical characteristics (Ta=25°C unless otherwise noted )
MCC
R
Micro Commercial Components
Parameter
Symbol
Test conditions
Min
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V(BR)DSS
IDSS
IGSS
VGS= 0V, ID=250μA
VDS=100V,VGS=0V
VGS= ±20V, VDS=0V
100
Gate threshold voltage*
VGS(th)
VDS= VGS, ID=250μA
1.0
Drain-source on-resistance*
RDS(ON)
VGS= 10V, ID=2.0A
VGS= 4.5V, ID=2.0A
Forward Transconductance
Dynamic Characteristics **
gFS
VDS= 5V, ID=2.0A
2
Input Capacitance
Ciss
Output Capacitance
Coss VDS=15V,VGS=0V,f=1MHZ
Reverse Transfer Capacitance
Switching Characteristics**
Crss
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=10V,VGS=4.5V,RL=2.8,ID=1A,RGEN=6
Turn-off Fall time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs VDS=10V,ID=2.0A,VGS=4.5V
Qgd
Source-Drain Diode characteristics
Drain-Source Diode Forward Current
IS
Diode Forward voltage
VSD
Notes:
*Pulse Test: Pulse Width300μA, Duty Cycle2%.
**These parameters have no way to verify.
VGS=0V,IS=2.0A
Typ Max
Unit
V
1 μA
±100
nA
1.5 2.0
V
250 280
m
260 300
s
520
130 pF
36
12
52
ns
17
10
4.8
1.2 nC
1.7
2.0
0.9 1.2
A
V
Revision: A
www.mccsemi.com
2 of 4
2018/05/13





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