P-Channel MOSFET. MCMG69 Datasheet

MCMG69 MOSFET. Datasheet pdf. Equivalent

MCMG69 Datasheet
Recommendation MCMG69 Datasheet
Part MCMG69
Description P-Channel MOSFET
Feature MCMG69; Features • Advanced Trench MOSFET Process Technology • Epoxy Meets UL 94 V-0 Flammability Rating • M.
Manufacture MCC
Datasheet
Download MCMG69 Datasheet




MCC MCMG69
Features
• Advanced Trench MOSFET Process Technology
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 6.9°C/W Junction to Case(Note 1)
Parameter
Symbol Rating Unit
Drain-Source Voltage
VDS
-12
V
Gate-Source Volltage
VGS
±8
V
Continuous Drain Current
ID
-16
A
Pulsed Drain Current(Note 2)
IDM
-65
A
Total Power Dissipation
PD
18
W
Note 1. Surface Mounted on FR4 Board, t<10 sec.
2. Repetitive Rating : Pulse Width Limited by Maximum Junction
Temperature.
Internal Structure
D
D
S
6
5
4
1
2
3
D
D
G
Marking:G69
MCMG69
P-CHANNEL
MOSFET
DFN2020-6G
D
B
E
G
F
P
J
R
Q
N
O
H
M
H
K
L
A
C
DIMENSIONS
DIM
INCHES
MIN MAX
MM
MIN MAX
A 0.028 0.032 0.700 0.800
B
0.008
0.203
C 0.000 0.002 0.000 0.050
D 0.075 0.083 1.900 2.100
E 0.075 0.083 1.900 2.100
F 0.033 0.037 0.850 0.950
G 0.010 0.014 0.250 0.350
H
0.010
0.250
J
0.008
0.250
K
0.026
0.650
L
0.051
1.300
M 0.037 0.041 0.950 1.050
N 0.022 0.026 0.550 0.650
O 0.010 0.014 0.250 0.350
P 0.003 0.007 0.080 0.180
Q 0.013 0.017 0.330 0.430
R 0.008 0.012 0.200 0.300
NOTE
TYP.
TYP.
TYP.
TYP.
TYP.
Rev.3-1-01012019
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MCC MCMG69
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA
Gate-Source Leakage Current
IGSS VDS=0V, VGS =±8V
Zero Gate Voltage Drain Current
IDSS
VDS=-12V, VGS=0V
Gate-Threshold Voltage(Note 3)
VGS(th) VDS=VGS, ID=-250µA
Drain-Source On-Resistance(Note 3)
RDS(on)
VGS=-4.5V, ID=-6A
VGS=-2.5V, ID=-4A
Diode Forward Current
IS
Diode Forward Voltage
VSD VGS=0V, IS=-8A
Forward tranconductance(Note 3)
gFS VDS=-5V, ID=-6.7A
Dynamic Characteristics(Note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Switching Characteristics(Note 4)
VDS=-10V,VGS=0V,f=1MHz
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS=-6V,VGS=-4.5V,ID=-10A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=10Ω
Turn-Off Fall Time
tf
Note 3. Pulse Test : Pulse Width300μs, Duty Cycle 2%.
4. Guaranteed by Design, Not Subject to Production Testing.
MCMG69
Min Typ Max Unit
-12
V
±100
nA
-1
µA
-0.4
-0.7
-1
V
12
21
15
27
-16
A
-1.2
V
20
S
2700
680
pF
590
35
48
5
nC
10
11
35
ns
30
10
Rev.3-1-01012019
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MCC MCMG69
Curve Characteristics
MCMG69
-50
TA=25°C
Pulsed
-40
Fig. 1 - Output Characteristics
VGS=-3V thru -4.5V
VGS=-2.5V
-30
VGS=-2V
-20
-10
VGS=-1.5V
-0
-0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Drain To Source Voltage (V)
80
TA=25°C
Pulsed
60
Fig. 3 - RDS(ON)ID
40
20
0
-0
-20
-10
VGS=-2.5V
VGS=-4.5V
-10
-20
-30
-40
-50
Drain Current (A)
Fig. 5 - ISVSD
Pulsed
TA=25°C
-1
-0.4
Rev.3-1-01012019
-0.6
-0.8
-1.0
Source To Drain Voltage (V)
-1.2
3/4
4000
3200
2400
1600
800
0
0
60
40
Fig. 2 - Capacitance Characteristics
C
iss
C
oss
Crss
-2
-4
-6
-8
-10
-12
Drain To Source Voltage (V)
Fig. 4 - RDS(ON)VGS
TA=25°C
Pulsed
ID=-6A
20
0
-1
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
25
-2
-3
-4
-5
Gate To Source Voltage (V)
Fig. 6 - Threshold Voltage
ID= -250μA
50
75
100
125
150
Junction Temperature (°C)
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