P-Channel MOSFET. MCMG69 Datasheet

MCMG69 MOSFET. Datasheet pdf. Equivalent

Part MCMG69
Description P-Channel MOSFET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download MCMG69 Datasheet



MCMG69
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
Halogen free available upon request by adding suffix "-HF"
Advanced trench MOSFET process technology
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
MCMG69
P-Channel
Enhancement Mode
Field Effect Transistor
Maximum ratings ( Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VDS
VGS
ID
Pulsed Drain Current(NOTE1)
IDM
Maximum Power Dissipation
Thermal Resistance from
Junction to Case (NOTE 2)
Operating Junction Temperature
PD
RθJC
TJ
Storage Temperature
TSTG
Limit
-12
±8
-16
-65
18
6.9
150
-55 ~+150
Equivalent Circuit
D
G
Internal Schematic
S
DFN2020-6G
Unit
V
V
A
A
W
/W
D
B
E
G
J
R
F
P
Q
N
O
H
H
M
A
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
K
L
Dimensions
INCHES
MM
MIN MAX
0.028
0.032
0.008REF
0000
0.002
0.075
0.075
0.083
0.083
0.033
0.010
0.037
0.014
0.010REF
0.008REF
0.026BSC
0.051BSC
0.037
0.041
0.022
0.026
0.010
0.003
0.014
0.007
0.013
0.008
0.017
0.012
MIN MAX
0.700
0.800
0.203REF
0.000
0.050
1.900
1.900
2.100
2.100
0.850
0.950
0.250
0.350
0.250REF
0.200REF
0.650BSC
1.300BSC
0.950
0.550
0.250
0.080
1.050
0.650
0.350
0.180
0.330
0.430
0.200
0.300
NOTE
Revision: B
www.mccsemi.com
1 of 5
2018/01/01



MCMG69
MCC
R
Micro Commercial Components
Electrical characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V(BR) DSS
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
VGS=0V ID=-250μA
VDS=-12V,VGS=0V
VGS8V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-6.0A
VGS=-2.5V, ID=-4.0A
VDS=-5V,ID=-6.7A
VDS=-10V,VGS=0V,
F=1.0MHz
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=10
VDS=-6V,ID=-10A,
VGS=-4.5V
VGS=0V,IS=-8A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Min Typ Max Unit
-12 -
--
--
-
-1
±100
V
μA
nA
-0.4 -0.7
-1.0
V
- 12
21 m
- 15 27 m
20 -
-
S
- 2700
- 680
- 590
-
-
-
PF
PF
PF
- 11
-
- 35
-
- 30
-
- 10
-
- 35 48
-5
-
- 10
-
nS
nS
nS
nS
nC
nC
nC
- - -1.2 V
- - -16
A
Revision: B
www.mccsemi.com
2 of 5
2018/01/01





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