NPN Transistor. 2SC4081-C Datasheet

2SC4081-C Transistor. Datasheet pdf. Equivalent

Part 2SC4081-C
Description NPN Transistor
Feature MCC R Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth CA 91.
Manufacture MCC
Datasheet
Download 2SC4081-C Datasheet



2SC4081-C
MCC
R
Micro Commercial Components
Micro Commercial Components
20736 Marilla Street Chatsworth
CA 91311
Phone:(818) 701-4933
Fax: (818) 701-4939
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Low Cob . Cob=2.0pF(Typ)
Complementary to 2SC1576A
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
50
60
7
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
к
к
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
ICBO Collector Cutoff Current
(VCB=60Vdc,IE=0)
IEBO Emitter Cutoff Current
(VEB=7.0Vdc,IC=0)
ON CHARACTERISTICS
--- --- 100 nAdc
--- --- 100 nAdc
BVCBO Collector-base breakdown voltage 60 --- --- Vdc
(IC=50µAdc,IE=0 )
BVCEO Collector-emitter breakdown voltage 50 --- --- Vdc
(IC=1mAdc,IB=0)
BVEBO
Emitter-base breakdown voltage
(IE=50µAdc,IC=0)
7
--- --- Vdc
hFE DC Current Gain
(IC=1mAdc, VCE=6.0Vdc)
120 --- 560 ---
VCE(sat)
Cob
Collector Saturation Voltage
(IC=50mAdc, IB=5.0mAdc)
Output Capacitance
(VCB=12.0Vdc, IE=0, f=1.0MHz)
--- ---
--- 2.0
0.4 Vdc
3.5 pF
fT Gain Bandwidth product
--- 180
--- MHz
(VCE=12Vdc, IC=2mAdc,f=30MHz)
2SC4081-A
2SC4081-B
2SC4081-C
NPN Silicon
Epitaxial Transistors
SOT-323
A
D
C
BC
FE
BE
G HJ
K
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
C .083 .096 2.10 2.45
D
.026 Nominal
0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000
.004 .000
.100
H
.035
.039
.90
1.00
J .004 .010 .100 .250
K .006 .016 .15 .40
Suggested Solder
Pad Layout
0.70
NOTE
0.90
1.90 mm
hFE CLASSIFICATION
Rank
Marking
hFE
A
BQ
120~270
B
BR
180~390
C
BS
270~560
0.65
0.65
Revision: D
www.mccsemi.com
1 of 4
2018/03/07



2SC4081-C
6&4081
MCC
R
Micro Commercial Components
50
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
100 Ta=25°C
80
60
40
20
0.50mA
00..4450mmAA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0 IB=0A
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
10
Ta=25°C
8
30µA
27µA
24µA
21µA
6 18µA
15µA
4 12µA
9µA
6µA
2
3µA
0 IB=0A
0 4 8 12 16 20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
500
Ta=25°C
200
100
50
VCE=5V
3V
1V
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
500 0.5
Ta=100°C
VCE=5V
Ta=25°C
200 25°C
55°C
100
0.2
IC/IB=50
0.1
20
10
50 0.05
0.02
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
0.01
0.2 0.5 1 2
5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current ( ΙΙ )
Fig. 6 Collector-emitter saturation
voltage vs. collector current
0.5
0.2
Ta=100°C
0.1 25°C
55°C
0.05
IC/IB=10
0.5
0.2
0.1
0.05
Ta=100°C
25°C
55°C
IC/IB=50
500
200
Ta=25°C
VCE=6V
0.02
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA)
0.01
0.2
0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
Fig.8 Collector-emitter saturation
voltage vs. collector current ( Ι )
voltage vs. collector current (ΙΙ)
100
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.9 Gain bandwidth product vs.
emitter current
Revision: D
www.mccsemi.com
2 of 4
2018/03/04





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