P-Channel MOSFET. MCQ4953 Datasheet

MCQ4953 MOSFET. Datasheet pdf. Equivalent

Part MCQ4953
Description P-Channel MOSFET
Feature MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley,.
Manufacture MCC
Total Page 4 Pages
Datasheet
Download MCQ4953 Datasheet



MCQ4953
MCC
R
Micro Commercial Components
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
Features
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
MCQ4953
P-Channel
Power MOSFET
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
VGS
PD
Parameter
Drain-source Voltage
Drain Current-Continuous
Gate-source Voltage
Power Dissipation
Rating
-30
-5.0
±20
1.25
Rthja Thermal Resistance from Junction to Ambient
( t≤10s)
100
TJ Operating Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
Unit
V
A
V
W
к/W
к
к
Equivalent Circuit
D1 D1 D2 D2
8 76 5
1 23 4
S1 G1 S2 G2
Top View
5
6
7
8
4
3
2
1
SOP-8
DB
CA
F
K
HJ
E
G
DIM
A
B
C
D
E
F
G
H
J
K
θ
DIMENSIONS
INCHES
MM
MIN MAX MIN MAX
0.053 0.069 1.350 1.750
0.004 0.010 0.100 0.250
0.053 0.061 1.350 1.550
0.013 0.020 0.330 0.510
0.007 0.010 0.170 0.250
0.189 0.197 4.800 5.000
0.050(BSC) 1.270(BSC)
0.228 0.244 5.800 6.200
0.150 0.157 3.800 4.000
0.016 0.050 0.400 1.270
0° 8° 0°
NOTE
Revision: B
www.mccsemi.com
1 of 4
2018/06/24



MCQ4953
MCC
R
Micro Commercial Components
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Static
Drain-source breakdown voltage
Gate-threshold voltage
Symbol
Test Condition
V(BR)DSS
VGS(th)
VGS =0V, ID =-250µA
VDS =VGS, ID =-250µA
Min
-30
-1.0
Gate-body leakage
IGSS VDS =0V, VGS =±20V
Zero gate voltage drain current
Drain-source on-resistancea
Forward transconductancea
Diode forward voltagea
Dynamicb
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
IDSS
RDS(on)
gfs
VSD
VDS =-30V, VGS =0V
VGS =-10V, ID =-4.9A
VGS =-4.5V, ID =-3.7A
VDS =-10V, ID =-4.9A
IS=-1.7A,VGS=0V
6.0
Qg
Qgs
Qgd
td(on)
tr
td(off)
VDS =-15V,VGS =-10V,ID =-4.9A
VDD=-15V,RL=15, ID -1A,
VGEN=-10V,RG=6
Fall time
tf
Notes :
a. Pulse Test : Pulse width300µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
Typ
-1.5
50
66
4
2
Max Units
V
-2.5 V
±100 nA
-1.0
60
90
-1.2
µA
m
S
V
25
nC
15
20
nS
80
40
Revision:B
www.mccsemi.com
2 of 4
2018/06/24





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