P-Channel MOSFET. MCQ4953 Datasheet

MCQ4953 MOSFET. Datasheet pdf. Equivalent

MCQ4953 Datasheet
Recommendation MCQ4953 Datasheet
Part MCQ4953
Description Dual P-Channel MOSFET
Feature MCQ4953; Features • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Infor.
Manufacture MCC
Datasheet
Download MCQ4953 Datasheet




MCC MCQ4953
Features
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
MCQ4953
Dual
P-Channel
Power MOSFET
Maximum Ratings
Operating Junction Temperature Range : -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
Thermal Resistance: 50°C/W Junction to Ambient(Note 1)
Parameter
Drain-Source Voltage
Gate-Source Volltage
Continuous Drain Current
Total Power Dissipation
Symbol
VDS
VGS
ID
PD
Rating
-30
±20
-5.0
2.5
Unit
V
V
A
W
Internal Structure:
D1 D1 D2 D2
8
76
5
1
23
4
S1 G1 S2 G2
C
HJ
SOP-8
D
B
A
F
E
K
G
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
NOTE
A 0.053 0.069 1.35 1.75
B 0.004 0.010 0.10 0.25
C 0.053 0.061 1.35 1.55
D 0.013 0.020 0.33 0.51
E 0.007 0.010 0.17 0.25
F 0.185 0.200 4.70 5.10
G
0.050
1.270
H 0.228 0.244 5.80 6.20
J 0.150 0.157 3.80 4.00
TYP.
K 0.016 0.050 0.40 1.27
θ 0° 8° 0° 8°
Suggested Solder Pad Layout
4.61mm
6.50mm
1.50mm
1.27mm 0.80mm
Rev.3-3-07192019
1/4
MCCSEMI.COM



MCC MCQ4953
MCQ4953
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
Gate-Threshold Voltage
Drain-Source On-Resistance
Forward Tranconductance(Note 2)
Diode Forward Voltage(Note 2)
V(BR)DSS
IGSS
IDSS
VGS(th)
RDS(on)
gFS
VSD
VGS=0V, ID=-250µA
VDS=0V, VGS =±20V
VDS=-30V, VGS=0V
VDS=VGS, ID=-250µA
VGS=-10V, ID=-4.9A
VGS=-4.5V, ID=-3.7A
VDS=-10V, ID=-4.9A
VGS=0V, IS=-1.7A
Dynamic Characteristics(Note 3)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VGEN=-10V, VDD =-15V, ID-1A
RG=6Ω, RL=15Ω
VGS=-10V, VDS =-15V
ID=-4.9A
Notes :
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%.
3. Guaranteed by Design, Not Subject to Production Testing.
Min Typ Max Unit
-30
V
±100
nA
-1
µA
-1.0
-1.5
-2.5
V
50
60
66
90
6
S
-1.2
V
15
20
ns
80
40
25
4
nC
2
Rev.3-3-07192019
2/4
MCCSEMI.COM



MCC MCQ4953
Curve Characteristics
-25
TA=25°C
Pulsed
-20
-15
-10
Fig. 1 - Output Characteristics
VGS=-10V,-8.0V,-5.0V,-4.5V
VGS=-4.0V
VGS=-3.5V
-5
-0
-0
100
80
60
40
-1
-2
-3
-4
-5
Drain to Source Voltage (V)
Fig. 3 - RDS(ON)ID
TA=25°C
Pulsed
VGS=-4.5V
VGS=-10V
20
-0
-2
-4
-6
-8
-10
Drain Current (A)
-10
Pulsed
TA=25°C
-1
-0.1
-0.01
-0.001
Fig. 5 - ISVSD
-1E-4
-1E-5-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Source to Drain Voltage (V)
Rev.3-3-07192019
3/4
MCQ4953
-5
-4
-3
-2
-1
-0
-0
140
120
100
80
60
40
20
-2
-100
Fig. 2 - Transfer Characteristics
TA=25°C
-1
-2
-3
-4
Gate to Source Voltage (V)
Fig. 4 - RDS(ON)VGS
TA=25°C
ID=-4.3A
-4
-6
-8
-10
Gate to Source Voltage (V)
Fig. 6 - Safe Operation Area
-10
-1
DC
-0.1
TA=25OC
Single Pulse
-0.01
-0.01
-0.1
-1
-10
Drain to Source Voltage (V)
100μs
1ms
10ms
100ms
1s
-100
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