PNP Transistor. BC856S Datasheet

BC856S Transistor. Datasheet pdf. Equivalent

Part BC856S
Description PNP Transistor
Feature MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley, .
Manufacture MCC
Total Page 3 Pages
Datasheet
Download BC856S Datasheet



BC856S
MCC
R
Micro Commercial Components
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
Features
Halogen free available upon request by adding suffix "-HF"
x Multi-chip Transistor
x Ultra-Small Surface Mount Package
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Mechanical Data
 Case: SOT-363
Maximum Ratings @ 25oC Unless Otherwise Specified
Symbol
Parameter
Value
OFF CHARACTERISTICS
ICM Peak Collector Current
-100
V(BR)CBO
Pd
Collector-base Voltage
Power Dissipation @ TA=25oC
-80
200
TJ, TSTG
Operating & Storage Temperature
-55~+150
Units
mA
V
mW
oC
BC856S
PNP
Plastic-Encapsulate
Transistors
200mW
SOT-363
G
BC
A
H
KM
J
D
L
C1 B2 E2
Marking5Ft / 3D
E1
BC856S
B1 C2
Structure schematic diagram
DIMENSIONS
INCHES
MM
DIM MIN
A .006
MAX MIN MAX NOTE
.014
0.15
0.35
B
.045
.053
1.15
1.35
C .079 .096 2.00 2.45
D .026
0.65Nominal
G
.047
.055
1.20
1.40
H
.071
.087
1.80
2.20
J --- .004 --- 0.10
K
.035
.043
0.90
1.10
L
.010
.018
0.26
0.46
M
.003
.006
0.08
0.15
Revision: D
www.mccsemi.com
1 of 3
2018/12/15



BC856S
BC856S
MCC
R
Micro Commercial Components
ELECTRICAL C HARACTERISTICS(Tamb=25Я unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO Ic=-10µA,IE=0
V(BR)CEO Ic=-10mA,IB=0
-80 V
-65 V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO IE=-10µA,IC=0
ICBO
VCB=-30V,IE=0
IEBO VEB=-5V,IC=0
-5 V
-15 nA
-100 nA
DC current gain
hFE VCE=-5V,IC=-2mA
110
Collector-emitter saturation voltage
VCE(sat)(1) IC=-10mA,IB=-0.5mA
VCE(sat)(2) IC=-100mA,IB=-5mA
-0.1
-0.3
V
V
Base-emitter voltage
VBE(sat) I C=-10V,IB=-0.5mA
0.7 V
Transition frequency
Collector output capacitance
fT VCE=-5V,IC=-10mA,f=100MHz
Cob VCB=-10V,IE=0,f=1MHz
100
MHz
2.5 pF
Revision: D
www.mccsemi.com
2 of 3
2018/12/15





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