NPN Transistor. BC847BS Datasheet

BC847BS Transistor. Datasheet pdf. Equivalent

BC847BS Datasheet
Recommendation BC847BS Datasheet
Part BC847BS
Description Dual NPN Transistor
Feature BC847BS; MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley,.
Manufacture MCC
Datasheet
Download BC847BS Datasheet




MCC BC847BS
MCC
R
Micro Commercial Components
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
x Ideally Suited for Automatic Insertion
x Ultra-Small Surface Mount Package
x For Switching and AF Amplifier Applications
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
x Marking:1C
Mechanical Data
x Case: SOT-363, Molded Plastic
x Polarity: See Diagram
 Maximum Ratings @ 25к Unless Otherwise Specified
Symbol
Parameter
Value
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
45
V(BR)CBO
Collector-Base Breakdown Voltage
50
V(BR)EBO
Emitter-Base Breakdown Voltage
6.0
IC Collector Current
100
ICM Peak Collector Current
Pd Power Dissipation @ TA=25к
200
300
TJ, TSTG
Operating & Storage Temperature
-55~+150
Units
Vdc
Vdc
Vdc
mAdc
mAdc
mW
к
BC847BS
Dual NPN Small
Signal Transistor
300mW
SOT-363
G
BC
A
H
KM
J
D
L
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX NOTE
A
.006
.014
0.15
0.35
B
.045
.053
1.15
1.35
C .079 .096 2.00 2.45
D .026
0.65Nominal
G
.047
.055
1.20
1.40
H
.071
.087
1.80
2.20
J --- .004 --- 0.10
K
.035
.043
0.90
1.10
L
.010
.018
0.26
0.46
M
.003
.006
0.08
0.15
Revision: B
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2018/04/19



MCC BC847BS
BC847BS
MCC
R
Micro Commercial Components
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min Typ Max
OFF CHARACTERISTICS
hFE
VCE(SAT)
VBE(ON)
ICBO
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
200
---
580
---
---
---
---
665
---
450
250
650
700
15
fT
Gain Bandwidth Product
--- 200
---
COB Collector-output Capacitance
--- 2
---
Units
---
mV
mV
nA
MHz
pF
Test Condition
VCE=5.0V, IC=2.0mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
VCE=5.0V, IC=2.0mA
VCB=30V, IE=0
VCE=5.0V, IC=10mA,
f=100MHz
V CB=10V, f=1.0MHz
Revision: B
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2018/04/19



MCC BC847BS
BC847BS
MCC
R
Micro Commercial Components
Typical Pulsed Current Gain
vs Collector Current
1200
1000
125 °C
V CE = 5.0 V
800
600
25 °C
400
- 40 °C
200
0
0.01 0.03 0.1 0.3 1 3 10 30
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
0.8
0.6
0.4
0.2
0.1
25 °C
125 °C
β = 10
1 10
I C- COLLECTOR CURRENT (mA)
100
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25 β = 10
0.2
0.15
0.1
0.05
25 °C
125 °C
- 40 °C
0.1 1
10 100
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0.1
- 40 °C
25 °C
125 °C
V CE = 5.0 V
1 10
I C - COLLECTOR CURRENT (mA)
40
Collector-Cutoff Current
vs Ambient Temperature
10
Vcb=45v
1
0.1
25
50 75 100 125
TA - AMBIE NT TEMP ERATURE (°C)
150
Input and Output Capacitance
vs Reverse Bias Voltage
5
f = 1.0 MHz
4
3
Cte
2
1 C ob
0
0 4 8 12 16 20
REVERSE BIAS VOLTAGE (V)
Revision: B
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2018/04/19







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