2N7002KA

Features High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch ESD Protected up to 2KV (HBM) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) 2N7002KA N-Channel MOSFET Maximum Ratings Operating Junction Temperature Range: -55°C to +150°C Storage Temperature: -55°C to +150°C Thermal Resistance: 357°C/W Junction to Ambient Parameter Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDS 60 V VGS ±20 V Drain Current-Continuous Power Dissipation ID 0.34 A PD 0.35 W Internal Structure D G S 1. GATE 2. SOURCE 3. DRAIN Marking:72K. SOT-23 A D 3 12 F E CB G H J L K DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 G 0.0004 0.006 0.01 0.15 H 0.035 0.043 0.90 1.10 J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 L 0.007 0.020 0.20 0.50 NOTE Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 2.000 inches mm 0.037 0.950 0.037 0.950 Rev.3-3-02242020 1/5 MCCSEMI.COM 2N7002KA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA Gate-Thre...