N-Channel MOSFET. 2N7002KA Datasheet

2N7002KA MOSFET. Datasheet pdf. Equivalent

2N7002KA Datasheet
Recommendation 2N7002KA Datasheet
Part 2N7002KA
Description N-Channel MOSFET
Feature 2N7002KA; Features • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • ESD P.
Manufacture MCC
Datasheet
Download 2N7002KA Datasheet




MCC 2N7002KA
Features
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
ESD Protected up to 2KV (HBM)
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
2N7002KA
N-Channel
MOSFET
Maximum Ratings
• Operating Junction Temperature Range: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Thermal Resistance: 357°C/W Junction to Ambient
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol Rating
Unit
VDS
60
V
VGS
±20
V
Drain Current-Continuous
Power Dissipation
ID
0.34
A
PD
0.35
W
Internal Structure
D
G
S
1. GATE
2. SOURCE
3. DRAIN
Marking:72K.
SOT-23
A
D
3
12
F
E
CB
G
H
J
L
K
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51
L 0.007 0.020 0.20 0.50
NOTE
Suggested Solder Pad Layout
0.031
0.800
0.035
0.900
0.079
2.000
inches
mm
0.037
0.950
0.037
0.950
Rev.3-3-02242020
1/5
MCCSEMI.COM



MCC 2N7002KA
2N7002KA
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA
Gate-Threshold Voltage(1)
VGS(th) VDS=VGS, ID=250µA
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Drain-Source On-Resistance(1)
Recovered Charge
Dynamic Characteristics
IDSS
IGSS
RDS(on)
Qr
VDS=48V, VGS=0V
VGS20V, VDS=0V
VGS10V, VDS=0V
VGS5V, VDS=0V
VGS=10V, ID=500mA
VGS=4.5V, ID=200mA
VGS=0V, IS=300mA,VR=25V
dl/dt=-100A/μs
Input Capacitance(2)
Ciss
Output Capacitance(2)
Coss VDS=25V,VGS=0V, f=1MHz
Reverse Transfer Capacitance(2)
Crss
Switching Characteristics
Turn-on Delay Time(2)
Turn-off Delay Time(2)
td(on)
td(off)
Reverse Recovery Time
trr
Source-Drain Diode Characteristics
VDD=25V,VGS=10V,RL=250Ω,
RGS=50Ω,RGEN=25Ω
VGS=0V, IS=300mA,VR=25V,
dl/dt=-100A/μs
Diode Forward Voltage
Gate-Source Zener Diode
Gate-Source Breakdown Voltage
VSD VGS=0V, IS=200mA
BVGSO IGS=±1mA,(Open Drain)
Note: 1. Pulse Test: Pulse Width 300μs, Duty Cycle2%.
2. These Parameters Have No Way to Verify.
Min Typ
60
1.0
1.4
30
35
13
8
30
0.82
±21.5
Max Unit
V
2.5
V
1.0
µA
±10
µA
±200 nA
±100 nA
5.0
Ω
5.3
nC
pF
10
ns
15
1.3
V
±30
V
Rev.3-3-02242020
2/5
MCCSEMI.COM



MCC 2N7002KA
Curve Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Fig. 1 - Output Characteristics
VGS=5V,6V,7V,10V
TA=25°C
Pulsed
VGS=4V
VGS=3V
1
2
3
4
5
Drain To Source Voltage (V)
5
TA=25°C
Pulsed
4
Fig. 3 - RDS(ON)ID
3
2
VGS=4.5V
1
VGS=10V
0
0.0
0.3
0.6
0.9
1.2
1.5
Drain Current (A)
Fig. 5 - ISVSD
2
1
Pulsed
0.1
0.01
TA=100°C
TA=25°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Source To Drain Voltage (V)
Rev.3-3-02242020
3/5
2N7002KA
1.2
VDS= 3V
Pulesd
1.0
Fig. 2 - Transfer Characteristics
0.8
TA=100°C
0.6
0.4
TA=25°C
0.2
0.0
0
2
4
6
8
Gate To Source Voltage (V)
Fig. 4 - RDS(ON)VGS
10
TA=25°C
Pulsed
8
6
ID=0.5A
4
2
0
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
25
2
4
6
8
10
Gate To Source Voltage (V)
Fig. 6 - Threshold Voltage
ID= 250μA
50
75
100
125
Junction Temperature (°C)
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