N-Channel MOSFET. 2N7002KA Datasheet

2N7002KA MOSFET. Datasheet pdf. Equivalent

Part 2N7002KA
Description N-Channel MOSFET
Feature MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley,.
Manufacture MCC
Datasheet
Download 2N7002KA Datasheet



2N7002KA
MCC
R
Micro Commercial Components
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
Features
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
ESD Protected up to 2.5KV (HBM)
Halogen free available upon request by adding suffix "-HF"
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Rating
Rating
VDS Drain-source Voltage
VGS Gate-source Voltage
ID Drain Current
PD Total Power Dissipation
60
±20
340
350
TJ Operating Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
RthJA Thermal Resistance fromJunction to Ambient
357
Unit
V
V
mA
mW
к
к
к/W
Equivalent circuit
2N7002KA
N-Channel MOSFET
SOT-23
A
D
3
12
FE
CB
1.GATE
2. SOURCE
3. DRAIN
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .104
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
NOTE
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: C
www.mccsemi.com
1 of 4
2018/10/19



2N7002KA
MCC
R
Micro Commercial Components
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =48V,VGS = 0V
IGSS1
VGS =±20V, VDS = 0V
Gate-body leakage current
IGSS2
VGS =±10V, VDS = 0V
IGSS2
VGS =±5V, VDS = 0V
Gate threshold voltage*
VGS(th) VDS =VGS, ID =250µA
Drain-source on-resistance*
RDS(on)
VGS =10V, ID =500mA
VGS =4.5V, ID =200mA
Recovered charge
VGS=0V,IS=300mA,VR=25V,
Qr
dls/dt=-100A/µS
Dynamic characteristics**
Input Capacitance
Ciss
Output Capacitance
Coss VDS=25V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics**
Turn-on delay time
Turn-off delay time
td(on)
td(off)
VGS=10 V, VDD=50V, RG=50Ω
RGS=50Ω,RL=250Ω
Reverse recovery Time
VGS=0V,IS=300mA,VR=25V,
trr
dls/dt=-100A/µS
Source-Drain Diode characteristics
Diode Forward voltage
VSD VGS =0V, IS=200mA
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
BVGSO IGS=±1mA(Open Drain)
Notes:
*Pulse Test: Pulse Width ≤300µs Duty Cycle ≤2%.
**These parameters have no way to verify.
Min Type Max Unit
60 V
1 µA
±10 µA
±200
nA
±100
nA
1 1.4 2.5
V
1.2 5
1.3 5.3
30 nC
35
13
8
10
15
30
pF
ns
0.82 1.3
±21.5
±30
V
V
Revision: C
www.mccsemi.com
2 of 4
2018/10/19





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