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PMZ290UNE Dataheets PDF



Part Number PMZ290UNE
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PMZ290UNE DatasheetPMZ290UNE Datasheet (PDF)

PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Appl.

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PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 500 mA; Tj = 25 °C [1] Min Typ Max Unit - - 20 V -8 - 8V - - 1A - 290 380 mΩ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia PMZ290UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 1 3 2 Transparent top view DFN1006-3 (SOT883) Graphic symbol D G S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name PMZ290UNE DFN1006-3 Description Version DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number PMZ290UNE Marking code ZS PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © Nexperia B.V. 2017. All rights reserved 2 / 14 Nexperia PMZ290UNE 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current ESD maximum rating VESD electrostatic discharge voltage Tsp = 25 °C Tamb = 25 °C HBM [1] [1] [2] [1] [1] [3] Min Max Unit - 20 V -8 8 V - 1A - 625 mA - 4A - 360 mW - 715 mW - 2700 mW -55 150 °C -55 150 °C -65 150 °C - 680 mA - 2000 V [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. PMZ290UNE Product data sheet All information provided in this document is subject to legal disclaimers. 14 May 2014 © Nexperia B.V. 2017. All rights reserved 3 / 14 Nexperia 120 Pder (%) 80 017aa.


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