N-channel MOSFET. PMZ290UNE Datasheet

PMZ290UNE MOSFET. Datasheet pdf. Equivalent

PMZ290UNE Datasheet
Recommendation PMZ290UNE Datasheet
Part PMZ290UNE
Description N-channel MOSFET
Feature PMZ290UNE; PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-ch.
Manufacture nexperia
Datasheet
Download PMZ290UNE Datasheet




nexperia PMZ290UNE
PMZ290UNE
20 V, N-channel Trench MOSFET
14 May 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - 20 V
-8 -
8V
- - 1A
- 290 380 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.



nexperia PMZ290UNE
Nexperia
PMZ290UNE
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
1
3
2
Transparent
top view
DFN1006-3 (SOT883)
Graphic symbol
D
G
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZ290UNE
DFN1006-3
Description
Version
DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883
7. Marking
Table 4. Marking codes
Type number
PMZ290UNE
Marking code
ZS
PMZ290UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© Nexperia B.V. 2017. All rights reserved
2 / 14



nexperia PMZ290UNE
Nexperia
PMZ290UNE
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C
HBM
[1]
[1]
[2]
[1]
[1]
[3]
Min Max Unit
- 20 V
-8 8
V
- 1A
- 625 mA
- 4A
- 360 mW
- 715 mW
- 2700 mW
-55 150 °C
-55 150 °C
-65 150 °C
- 680 mA
- 2000 V
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Measured between all pins.
PMZ290UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© Nexperia B.V. 2017. All rights reserved
3 / 14







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