N-channel MOSFET. PMZ290UNE Datasheet

PMZ290UNE MOSFET. Datasheet pdf. Equivalent

Part PMZ290UNE
Description N-channel MOSFET
Feature PMZ290UNE 20 V, N-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description N-ch.
Manufacture nexperia
Total Page 14 Pages
Datasheet
Download PMZ290UNE Datasheet



PMZ290UNE
PMZ290UNE
20 V, N-channel Trench MOSFET
14 May 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
[1]
Min Typ Max Unit
- - 20 V
-8 -
8V
- - 1A
- 290 380 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.



PMZ290UNE
Nexperia
PMZ290UNE
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 G gate
2 S source
3 D drain
Simplified outline
1
3
2
Transparent
top view
DFN1006-3 (SOT883)
Graphic symbol
D
G
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZ290UNE
DFN1006-3
Description
Version
DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883
7. Marking
Table 4. Marking codes
Type number
PMZ290UNE
Marking code
ZS
PMZ290UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© Nexperia B.V. 2017. All rights reserved
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