Document
PMZ290UNE
20 V, N-channel Trench MOSFET
14 May 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
• Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
[1]
Min Typ Max Unit - - 20 V
-8 -
8V
- - 1A
- 290 380 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
PMZ290UNE
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
1 3
2
Transparent top view
DFN1006-3 (SOT883)
Graphic symbol
D
G
S 017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMZ290UNE
DFN1006-3
Description
Version
DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883
7. Marking
Table 4. Marking codes Type number PMZ290UNE
Marking code ZS
PMZ290UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© Nexperia B.V. 2017. All rights reserved
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Nexperia
PMZ290UNE
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C HBM
[1] [1] [2] [1]
[1] [3]
Min Max Unit - 20 V
-8 8
V
- 1A
- 625 mA
- 4A
- 360 mW - 715 mW
- 2700 mW
-55 150 °C
-55 150 °C
-65 150 °C
- 680 mA
- 2000 V
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. [3] Measured between all pins.
PMZ290UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 May 2014
© Nexperia B.V. 2017. All rights reserved
3 / 14
Nexperia
120 Pder (%)
80
017aa.