P-Channel MOSFET. SIL3407 Datasheet

SIL3407 MOSFET. Datasheet pdf. Equivalent

SIL3407 Datasheet
Recommendation SIL3407 Datasheet
Part SIL3407
Description P-Channel MOSFET
Feature SIL3407; SIL3407 Features • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halog.
Manufacture MCC
Datasheet
Download SIL3407 Datasheet




MCC SIL3407
SIL3407
Features
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 78°C/W Junction to Ambient
Parameter
Symbol Rating Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Volltage
VGS
±20
V
Continuous Drain Current
Total Power Dissipation(Note 1)
ID
-4.1
A
PD
1.6
W
Note 1. Device Mounted on FR-4 Substrate PC Board, 2oz Copper,
with 1inch2 Copper Plate.
Internal Structure
D
D
S
6
5
4
1
2
3
D
D
G
Marking:R7 / 3407
P-CHANNEL
MOSFET
SOT23-6L
G
654
1 23
BC
A
H
K
M
J
D
L
DIMENSIONS
DIM
INCHES
MIN MAX
MM
MIN MAX
A 0.012 0.020 0.30 0.50
B 0.051 0.070 1.30 1.80
C 0.087 0.126 2.20 3.20
D
0.037
0.95
G
0.074
1.90
H 0.106 0.122 2.70 3.10
J 0.002 0.006 0.05 0.15
K 0.030 0.051 0.75 1.30
L 0.012 0.024 0.30 0.60
M 0.003 0.008 0.08 0.22
NOTE
TYP.
TYP.
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MCC SIL3407
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA
Gate-Source Leakage Current
IGSS VDS=0V, VGS =±20V
Zero Gate Voltage Drain Current
IDSS VDS=-24V, VGS=0V
Gate-Threshold Voltage
VGS(th) VDS=VGS, ID=250µA
Drain-Source On-Resistance(Note 2)
RDS(on)
VGS=-10V, ID=-4.1A
VGS=-4.5V, ID=-3A
Diode Forward Voltage(Note 2)
VSD VGS=0V, IS=-1A
Forward tranconductance(Note 2)
gFS
VDS=-5V, ID=-4A
Dynamic Characteristics(Note 3)
Input Capacitance
Ciss
Output Capacitance
Coss VDS=-15V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VGS=-10V,VDS=-15V,
RL=3.6Ω,RGEN=3Ω
Turn-Off Fall Time
tf
Note 2. Pulse Test : Pulse Width300μs, Duty Cycle 2%.
3. Guaranteed by Design, Not Subject to Production Testing.
SIL3407
Min Typ Max Unit
-30
V
±100
nA
-1
µA
-1
-1.4
-3
V
50
70
-1.2
V
5.5
S
700
120
pF
75
8.6
5
ns
28.2
13.5
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MCC SIL3407
Curve Characteristics
SIL3407
-20
TA=25°C
Pulsed
-15
Fig. 1 - Output Characteristics
VGS=-10V,5V,-4.5V,4V
VGS=-3.5V
-10
VGS=-3.0V
-5
-0
-0
100
80
60
40
-1
-2
-3
-4
-5
Drain To Source Voltage (V)
Fig. 3 - RDS(ON)ID
TA=25°C
Pulsed
VGS=-4.5V
VGS=-10V
20
-0
-2
-4
-6
-8
-10
Drain Current (A)
10
TA=25°C
Pulsed
1
Fig. 5 - I V
S
SD
0.1
0.01
1E-3
1E-4
1E-5
0.2
0.4
0.6
0.8
1.0
1.2
Source To Drain Voltage (V)
Fig. 2 - Transfer Characteristics
-5
TA=25°C
Pulesd
-4
-3
-2
-1
-0
-0
-1
-2
-3
-4
Gate To Source Voltage (V)
Fig. 4 - RDS(ON)VGS
180
TA=25°C
Pulsed
150
120
ID=-4.1A
90
60
30
-2
-4
-6
-8
-10
Gate To Source Voltage (V)
Rev.3-2-04292019
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