P-Channel MOSFET. SIL3407 Datasheet

SIL3407 MOSFET. Datasheet pdf. Equivalent

Part SIL3407
Description P-Channel MOSFET
Feature MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley,.
Manufacture MCC
Datasheet
Download SIL3407 Datasheet



SIL3407
MCC
R
Micro Commercial Components
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking Code: R7 / 3407
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
VGS
PD
R©JA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Gate-source Voltage
Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
-30
_+-42.01
0.35
357
-55 to +150
-55 to +150
Equivalent Circuit
Unit
V
A
V
W
к/W
к
к
SIL3407
P-Channel
Enhancement Mode
Field Effect Transistor
SOT23-6L
G
6 54
1 23
BC
A
H
KM
J
D
L
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX NOTE
A .012 .020 0.30 0.50
B
.051
.070
1.30
1.80
C
.087
.126
2.20
3.20
D .037
0.95BSC
G .074
1.90BSC
H
.106
.122
2.70
3.10
J
.002
.006
0.05
0.15
K
.035
.051
0.90
1.30
L .012 .024 0.30 0.60
M
.003
.008
0.08
0.22
Revision: B
www.mccsemi.com
1 of 4
2018 /08/17



SIL3407
MCC
R
Micro Commercial Components
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage
BVDSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS VDS =-24V,VGS = 0V
Gate-source leakage current
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
IGSS
RDS(on)
gFS
VGS =±20V, VDS = 0V
VGS =-10V, ID =-4.1A
VGS =-4.5V, ID =-3A
VDS =-5V, ID =-4A
Gate threshold voltage
Diode forward voltage (note 1)
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS(th)
VSD
VDS =VGS, ID =-250µA
IS=-1A,VGS=0V
Ciss
Coss
Crss
VDS =-15V,VGS =0V,f =1MHz
Switching Characteristics (note 2)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
tf
VGS=-10V,VDS=-15V,
RL=3.6,RGEN=3
Notes:
1. Pulse test: Pulse width 300µs, duty cycle 2%.
2. These parameters have no way to verify.
Min Typ
-30
50
68
5.5
-1 -1.4
700
120
75
8.6
5.0
28.2
13.5
Max Units
-1
±100
60
87
-3
-1
V
µA
nA
m
m
S
V
V
pF
pF
pF
ns
ns
ns
ns
Revision: B
www.mccsemi.com
2 of 4
2018 /08/17





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