N-channel MOSFET. PSMN2R3-100SSE Datasheet

PSMN2R3-100SSE MOSFET. Datasheet pdf. Equivalent

Part PSMN2R3-100SSE
Description N-channel MOSFET
Feature PSMN2R3-100SSE N-channel 100 V, 2.3 mΩ, SuperSOA MOSFET in LFPAK88 14 April 2020 Objective data s.
Manufacture nexperia
Datasheet
Download PSMN2R3-100SSE Datasheet



PSMN2R3-100SSE
PSMN2R3-100SSE
N-channel 100 V, 2.3 mΩ, SuperSOA MOSFET in LFPAK88
14 April 2020
Objective data sheet
1. General description
SuperSOA N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C.
Part of Nexperia's "NextPower Live" portfolio, the PSMN2R3-100SSE delivers very low RDSon and
a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK88 package.
PSMN2R3-100SSE complements the latest "hot-swap" controllers - robust enough to withstand
substantial inrush currents during turn on, low RDSon to minimize I2R losses and deliver optimum
efficiency when turned fully ON .
2. Features and benefits
Fully optimized Safe Operating Area (SOA) for superior linear mode operation
Low RDSon for low I2R conduction losses
LFPAK88 package for applications that demand the highest performance and reliability
3. Applications
Hot swap
Load switch
Soft start
E-fuse
Telecommunication systems based on a 48 V backplane/supply rail
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
25 °C ≤ Tj ≤ 150 °C
VGS = 10 V; Tmb = 25 °C
Tmb = 25 °C; Fig. 1
VGS = 10 V; ID = 25 A; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 100 °C
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 3
ID = 82 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
[1]
Min Typ Max Unit
- - 100 V
- - 246 A
- - 284 W
-55 -
150 °C
- 1.79 2.28 mΩ
- 2.8 3.6 mΩ
[tbd] 32
[tbd] 162
[tbd] nC
[tbd] nC
- - 732 mJ



PSMN2R3-100SSE
Nexperia
Symbol
Parameter
Source-drain diode
Qr recovered charge
[1] Protected by 100% test
[2] includes capacitive recovery
PSMN2R3-100SSE
N-channel 100 V, 2.3 mΩ, SuperSOA MOSFET in LFPAK88
Conditions
Min Typ Max Unit
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; [2]
VDS = 50 V; Fig. 4
-
92 -
nC
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1G
gate
2S
source
3S
source
4S
source
mb D
mounting base; connected
to drain
1 234
LFPAK88 (SOT1235)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN2R3-100SSE LFPAK88
Description
plastic, single-ended surface-mounted package (LFPAK88); 4
leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm body
Version
SOT1235
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
Ptot
ID
IDM
Tstg
Tj
Tsld(M)
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
peak drain current
storage temperature
junction temperature
peak soldering
temperature
Conditions
25 °C ≤ Tj ≤ 150 °C
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C
VGS = 10 V; Tmb = 100 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 2
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 284 W
- 246 A
- 156 A
- 986 A
-55 150 °C
-55 150 °C
- 260 °C
- 237 A
- 986 A
PSMN2R3-100SSE
Objective data sheet
All information provided in this document is subject to legal disclaimers.
14 April 2020
© Nexperia B.V. 2020. All rights reserved
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