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PESD2ETH1G-T Dataheets PDF



Part Number PESD2ETH1G-T
Manufacturers nexperia
Logo nexperia
Description ESD protection
Datasheet PESD2ETH1G-T DatasheetPESD2ETH1G-T Datasheet (PDF)

PESD2ETH1G-T ESD protection for In-vehicle networks 7 February 2020 Product data sheet 1. General description Fully OPEN Alliance 100BASE-T1 and 1000BASE-T1 compliant Electrostatic discharge (ESD) protection device in a small SOT23 surface-mounted plastic package designed to protect two automotive in-vehicle network bus lines from the damage caused by ESD and other transients. 2. Features and benefits • Fully OPEN Alliance 100BASE-T1 and 1000BASE-T1 compliant • High trigger voltage: Vt1 = 100.

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PESD2ETH1G-T ESD protection for In-vehicle networks 7 February 2020 Product data sheet 1. General description Fully OPEN Alliance 100BASE-T1 and 1000BASE-T1 compliant Electrostatic discharge (ESD) protection device in a small SOT23 surface-mounted plastic package designed to protect two automotive in-vehicle network bus lines from the damage caused by ESD and other transients. 2. Features and benefits • Fully OPEN Alliance 100BASE-T1 and 1000BASE-T1 compliant • High trigger voltage: Vt1 = 100 V min. • Low capacitance: Cd < 2 pF • ESD protection up to 30 kV (IEC 61000-4-2) • 1000 contact discharges (OPEN Alliance specification) with 15 kV (IEC 61000-4-2) • AEC-Q101 qualified / automotive grade 3. Applications ESD protection for in-vehicle network lines In-automotive environments • OPEN Alliance 100/1000BASE-T1 Ethernet • Low-Voltage Differential Signaling (LVDS) automotive 4. Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Cd diode capacitance Vt1 trigger voltage VESD electrostatic discharge voltage Conditions Tamb = 25 °C f = 1 MHz; VR = 0 V; Tamb = 25 °C Tamb = 25 °C IEC 61000-4-2; contact discharge [1] [2] [3] 1000 contact discharges (IEC [3] 61000-4-2); OPEN Alliance specification Min - 100 30 15 Typ - 1.8 140 - [1] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008 [2] Device stressed with ten non-repetitive ESD pulses. [3] Measured from pin 1 or 2 to pin 3. Max 24 2 - Unit V pF V kV kV Nexperia PESD2ETH1G-T ESD protection for In-vehicle networks 5. Pinning information Table 2. Pinning information Pin Symbol Description 1K cathode 2K cathode 3 CC common cathode Simplified outline 3 12 SOT23 Graphic symbol K1 CC K2 006aaa155 6. Ordering information Table 3. Ordering information Type number Package Name PESD2ETH1G-T SOT23 Description Version plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number PESD2ETH1G-T [1] % = placeholder for manufacturing site code Marking code[1] %HK PESD2ETH1G-T Product data sheet All information provided in this document is subject to legal disclaimers. 7 February 2020 © Nexperia B.V. 2020. All rights reserved 2 / 18 Nexperia PESD2ETH1G-T ESD protection for In-vehicle networks 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC60134) Symbol Parameter Conditions IPPM Tj Tamb Tstg VESD rated peak pulse current junction temperature ambient temperature storage temperature electrostatic discharge voltage tp = 8/20 µs [1] [2] IEC 61000-4-2; contact discharge [3] [2] ISO 10605; contact discharge; C = 150 pF; [3] [2] R = 330 Ω ISO 10605; contact discharge; C = 330 pF; [3] [2] R = 330 Ω 1000 contact discharges (IEC 61000-4-2); [2] OPEN Alliance specification Min -55 -65 30 30 30 15 [1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 or 2 to pin 3. [3] Device stressed with ten non-repetitive ESD pulses. 120 IPP (%) 100 % IPP; 8 µs 001aaa630 IPP 100 % 90 % 80 e-t 50 % IPP; 20 µs 40 Max Unit 2.3 A 150 °C 150 °C 150 °C - kV - kV - kV - kV 0 0 10 20 30 40 t (µs) Fig. 1. 8/20 µs pulse waveform according to IEC 61000-4-5 10 % tr = 0.6 ns to 1 ns 30 ns 60 ns t 001aaa631 Fig. 2. ESD pulse waveform according to IEC 61000-4-2 PESD2ETH1G-T Product data sheet All information provided in this document is subject to legal disclaimers. 7 February 2020 © Nexperia B.V. 2020. All rights reserved 3 / 18 Nexperia PESD2ETH1G-T ESD protection for In-vehicle networks 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions VRWM reverse standoff voltage Tamb = 25 °C Vh holding voltage Vt1 trigger voltage IRM reverse leakage current VRWM = 24 V; VR = 0 V; Tamb = 25 °C Cd diode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C ΔCd/Cd diode capacitance matching f = 1 MHz; VR = 2.5 V; Tamb = 25 °C Rdyn dynamic resistance IR = 40 A; Tamb = 25 °C [1] [1] [2] [2] [1] Min Typ Max Unit - - 24 V 28 - - V 100 140 - V - 1 100 nA - 1.8 2 pF - 0.5 - % - 0.5 - % - 0.6 - Ω [1] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008 [2] ΔCd is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured between pin 2 and pin 3. I 1.2 reverse PPP I Rdyn = V/ I V PPP(25°C) 0.8 001aaa193 V Vh Vt1 0.4 forward aaa-030568 Fig. 3. V-I characteristics for a bidirectional ESD protection diode 0 0 50 100 150 200 Tj (°C) Fig. 4. Relative variation of peak pulse power as a function of junction temperature; typical values PESD2ETH1G-T Product data sheet All information provided in this document is subject to legal disclaimers. 7 February 2020 © Nexperia B.V. 2020. All rights reserved 4 / 18 .


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