Document
PESD2ETH1G-T
ESD protection for In-vehicle networks
7 February 2020
Product data sheet
1. General description
Fully OPEN Alliance 100BASE-T1 and 1000BASE-T1 compliant Electrostatic discharge (ESD) protection device in a small SOT23 surface-mounted plastic package designed to protect two automotive in-vehicle network bus lines from the damage caused by ESD and other transients.
2. Features and benefits
• Fully OPEN Alliance 100BASE-T1 and 1000BASE-T1 compliant • High trigger voltage: Vt1 = 100 V min. • Low capacitance: Cd < 2 pF • ESD protection up to 30 kV (IEC 61000-4-2) • 1000 contact discharges (OPEN Alliance specification) with 15 kV (IEC 61000-4-2) • AEC-Q101 qualified / automotive grade
3. Applications
ESD protection for in-vehicle network lines In-automotive environments • OPEN Alliance 100/1000BASE-T1 Ethernet • Low-Voltage Differential Signaling (LVDS) automotive
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VRWM
reverse standoff voltage
Cd diode capacitance Vt1 trigger voltage
VESD
electrostatic discharge voltage
Conditions Tamb = 25 °C
f = 1 MHz; VR = 0 V; Tamb = 25 °C Tamb = 25 °C IEC 61000-4-2; contact discharge
[1] [2] [3]
1000 contact discharges (IEC
[3]
61000-4-2); OPEN Alliance specification
Min -
100 30 15
Typ -
1.8 140 -
[1] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008 [2] Device stressed with ten non-repetitive ESD pulses. [3] Measured from pin 1 or 2 to pin 3.
Max 24
2 -
Unit V
pF V kV kV
Nexperia
PESD2ETH1G-T
ESD protection for In-vehicle networks
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1K
cathode
2K
cathode
3 CC
common cathode
Simplified outline
3
12
SOT23
Graphic symbol
K1 CC
K2
006aaa155
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD2ETH1G-T
SOT23
Description
Version
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body
7. Marking
Table 4. Marking codes Type number PESD2ETH1G-T
[1] % = placeholder for manufacturing site code
Marking code[1] %HK
PESD2ETH1G-T
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 February 2020
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Nexperia
PESD2ETH1G-T
ESD protection for In-vehicle networks
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC60134)
Symbol
Parameter
Conditions
IPPM Tj Tamb Tstg VESD
rated peak pulse current junction temperature ambient temperature storage temperature electrostatic discharge voltage
tp = 8/20 µs
[1] [2]
IEC 61000-4-2; contact discharge
[3] [2]
ISO 10605; contact discharge; C = 150 pF; [3] [2] R = 330 Ω
ISO 10605; contact discharge; C = 330 pF; [3] [2] R = 330 Ω
1000 contact discharges (IEC 61000-4-2); [2] OPEN Alliance specification
Min -55 -65 30 30
30
15
[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 or 2 to pin 3. [3] Device stressed with ten non-repetitive ESD pulses.
120 IPP (%)
100 % IPP; 8 µs
001aaa630
IPP 100 % 90 %
80 e-t
50 % IPP; 20 µs 40
Max Unit 2.3 A 150 °C 150 °C 150 °C - kV - kV
- kV
- kV
0 0 10 20 30 40 t (µs)
Fig. 1. 8/20 µs pulse waveform according to IEC 61000-4-5
10 %
tr = 0.6 ns to 1 ns 30 ns
60 ns
t
001aaa631
Fig. 2. ESD pulse waveform according to IEC 61000-4-2
PESD2ETH1G-T
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 February 2020
© Nexperia B.V. 2020. All rights reserved
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Nexperia
PESD2ETH1G-T
ESD protection for In-vehicle networks
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
VRWM
reverse standoff voltage
Tamb = 25 °C
Vh holding voltage
Vt1 trigger voltage
IRM reverse leakage current VRWM = 24 V; VR = 0 V; Tamb = 25 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
ΔCd/Cd
diode capacitance matching
f = 1 MHz; VR = 2.5 V; Tamb = 25 °C
Rdyn
dynamic resistance
IR = 40 A; Tamb = 25 °C
[1] [1]
[2] [2] [1]
Min Typ Max Unit - - 24 V
28 - - V
100 140 -
V
- 1 100 nA
-
1.8 2
pF
- 0.5 - %
- 0.5 - %
- 0.6 - Ω
[1] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008 [2] ΔCd is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured between pin 2 and pin 3.
I 1.2
reverse
PPP
I
Rdyn = V/ I V
PPP(25°C) 0.8
001aaa193
V Vh Vt1
0.4
forward
aaa-030568
Fig. 3. V-I characteristics for a bidirectional ESD protection diode
0 0 50 100 150 200 Tj (°C)
Fig. 4. Relative variation of peak pulse power as a function of junction temperature; typical values
PESD2ETH1G-T
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 February 2020
© Nexperia B.V. 2020. All rights reserved
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