Gate Driver. LM5111 Datasheet

LM5111 Driver. Datasheet pdf. Equivalent

Part LM5111
Description Dual 5-A Compound Gate Driver
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LM5111
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Technical
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Design
LM5111
SNVS300H – JULY 2004 – REVISED SEPTEMBER 2016
LM5111 Dual 5-A Compound Gate Driver
1 Features
1 Independently Drives Two N-Channel MOSFETs
• Compound CMOS and Bipolar Outputs Reduce
Output Current Variation
• 5-A Sink and 3-A Source Current Capability
• Two Channels can be Connected in Parallel to
Double the Drive Current
• Independent Inputs (TTL Compatible)
• Fast Propagation Times (25 ns Typical)
• Fast Rise and Fall Times (14 ns and 12 ns Rise
and Fall, Respectively, With 2-nF Load)
• Available in Dual Noninverting, Dual Inverting and
Combination Configurations
• Supply Rail Undervoltage Lockout Protection
(UVLO)ƒ
• LM5111-4 UVLO Configured to Drive PFET
through OUT_A and NFET through OUT_B
• Pin Compatible With Industry Standard Gate
Drivers
3 Description
The LM5111 Dual Gate Driver replaces industry
standard gate drivers with improved peak output
current and efficiency. Each compound output driver
stage includes MOS and bipolar transistors operating
in parallel that together sink more than 5-A peak from
capacitive loads. Combining the unique
characteristics of MOS and bipolar devices reduces
drive current variation with voltage and temperature.
Undervoltage lockout protection is also provided. The
drivers can be operated in parallel with inputs and
outputs connected to double the drive current
capability. This device is available in the SOIC
package or the thermally enhanced MSOP-
PowerPAD package.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
LM5111
SOIC (8)
5.00 mm x 6.00 mm
MSOP-PowerPAD (8) 3.00 mm x 4.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
2 Applications
• Synchronous Rectifier Gate Drivers
• Switch-mode Power Supply Gate Driver
• Solenoid and Motor Drivers
Simplified Application Diagram
LM5111
1 N/C
N/C 8
INA
2 INA
OUTA 7
3 VEE
VCC 6
INB
4 INB
OUTB 5
0.1 µF
1.0 µF
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.



LM5111
LM5111
SNVS300H – JULY 2004 – REVISED SEPTEMBER 2016
www.ti.com
Table of Contents
1 Features .................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Device Options....................................................... 3
6 Pin Configuration and Functions ......................... 3
7 Specifications......................................................... 4
7.1 Absolute Maximum Ratings ...................................... 4
7.2 ESD Ratings.............................................................. 4
7.3 Recommended Operating Conditions....................... 4
7.4 Thermal Information .................................................. 4
7.5 Electrical Characteristics........................................... 5
7.6 Switching Characteristics .......................................... 5
7.7 Typical Characteristics .............................................. 7
8 Detailed Description .............................................. 9
8.1 Overview ................................................................... 9
8.2 Functional Block Diagram ......................................... 9
8.3 Feature Description................................................. 10
8.4 Device Functional Modes........................................ 10
9 Application and Implementation ........................ 11
9.1 Application Information............................................ 11
9.2 Typical Application ................................................. 11
10 Power Supply Recommendations ..................... 13
10.1 Bias Supply Voltage.............................................. 13
11 Layout................................................................... 13
11.1 Layout Guidelines ................................................. 13
11.2 Layout Example .................................................... 14
11.3 Thermal Considerations ........................................ 14
12 Device and Documentation Support ................. 17
12.1 Receiving Notification of Documentation Updates 17
12.2 Community Resources.......................................... 17
12.3 Trademarks ........................................................... 17
12.4 Electrostatic Discharge Caution ............................ 17
12.5 Glossary ................................................................ 17
13 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision G (March 2013) to Revision H
Page
• Added Device Information table, Pin Configuration and Functions section, Specifications section, ESD Ratings table,
Recommended Operating Conditions table, Thermal Information table, Feature Description section, Device
Functional Modes section, Application and Implementation section, Power Supply Recommendations section,
Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information
section ................................................................................................................................................................................... 1
Changes from Revision F (March 2013) to Revision G
Page
• Changed layout of National Semiconductor Data Sheet to TI format .................................................................................. 16
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