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LM5112-Q1 Dataheets PDF



Part Number LM5112-Q1
Manufacturers Texas Instruments
Logo Texas Instruments
Description Tiny 7-A MOSFET Gate Driver
Datasheet LM5112-Q1 DatasheetLM5112-Q1 Datasheet (PDF)

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LM5112, LM5112-Q1 SNVS234C – SEPTEMBER 2004 – REVISED SEPTEMBER 2016 LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features •1 LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Rise a.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LM5112, LM5112-Q1 SNVS234C – SEPTEMBER 2004 – REVISED SEPTEMBER 2016 LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 1 Features •1 LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Rise and Fall Times: 14 ns or 12 ns Rise or Fall With 2-nF Load • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device • Supply Rail Undervoltage Lockout Protection • Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation • Power Enhanced 6-Pin WSON Package (3 mm × 3 mm) or Thermally Enhanced MSOP-PowerPAD Package • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground 2 Applications • DC to DC Switch-Mode Power Supplies • AC to DC Switch-Mode Power Supplies • Solar Microinverters • Solenoid and Motor Drives 3 Description The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and noninverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) LM5112, LM5112-Q1 WSON (6) 3.00 mm × 3.00 mm MSOP PowerPAD (8) 3.00 mm × 3.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simplified Block Diagram VCC IN IN_REF INB UVLO IN_REF OUT LM5112 VEE Copyright © 2016, Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM5112, LM5112-Q1 SNVS234C – SEPTEMBER 2004 – REVISED SEPTEMBER 2016 www.ti.com Table of Contents 1 Features .................................................................. 1 2 Applications ........................................................... 1 3 Description ............................................................. 1 4 Revision History..................................................... 2 5 Pin Configuration and Functions ......................... 3 6 Specifications......................................................... 4 6.1 Absolute Maximum Ratings ...................................... 4 6.2 ESD Ratings ............................................................ 4 6.3 Recommended Operating Conditions ...................... 4 6.4 Thermal Information ................................................. 4 6.5 Electrical Characteristics........................................... 5 6.6 Switching Characteristics .......................................... 5 6.7 Typical Characteristics .............................................. 6 7 Detailed Description .............................................. 8 7.1 Overview ................................................................... 8 7.2 Functional Block Diagram ......................................... 8 7.3 Feature Description .................................................. 9 7.4 Device Functional Modes ....................................... 10 8 Application and Implementation ........................ 11 8.1 Application Information .......................................... 11 8.2 Typical Application ................................................. 11 9 Power Supply Recommendations...................... 13 10 Layout................................................................... 13 10.1 Layout Guidelines ................................................. 13 10.2 Layout Example .................................................... 15 11 Device and Documentation Support ................. 16 11.1 Related Links ........................................................ 16 11.2 Receiving Notification of Documentation Updates 16 11.3 Community Resources.......................................... 16 11.4 Trademarks ........................................................... 16 11.5 Electrostatic Discharge Caution ............................ 16 11.6 Glossary ................................................................ 16 12 Mechanical, Packaging, and Orderable Informatio.


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