Schottky rectifier. STPS10L45C Datasheet

STPS10L45C rectifier. Datasheet pdf. Equivalent

Part STPS10L45C
Description Low drop power Schottky rectifier
Feature STPS10L45C Low drop power Schottky rectifier Main product characteristics IF(AV) VRRM Tj (max) VF(.
Manufacture STMicroelectronics
Datasheet
Download STPS10L45C Datasheet



STPS10L45C
STPS10L45C
Low drop power Schottky rectifier
Main product characteristics
IF(AV)
VRRM
Tj (max)
VF(max)
2x5A
45 V
150° C
0.46 V
Features and benefits
Low forward voltage drop meaning very small
conduction losses
Low dynamic losses as a result of the Schottky
barrier
Insulated package: TO-220FPAB
Insulating voltage = 2000 V DC
Capacitance = 12 pF
Avalanche capability specified
Description
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, TO-220FPAB, I2PAK and
D2PAK, these devices are intended for use in low
voltage, high frequency inverters, free-wheeling
and polarity protection applications.
A1
A2
K
A2
A1
D2PAK
STPS10L45CG
K
A2
K
A1
I2PAK
STPS10L45CR
A2
K
A1
TO-220AB
STPS10L45CT
A2
K
A1
TO-220FPAB
STPS10L45CFP
March 2007
Rev 4
1/10
www.st.com
10



STPS10L45C
Characteristics
1 Characteristics
STPS10L45C
Table 1. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
RMS forward voltage
Average forward
current
TO-220AB /
D2PAK / I2PAK
TO-220FPAB
Tc =135° C Per diode
δ = 0.5
Per device
Tc = 140° C Per diode
δ = 0.5
Per device
45
20
5
10
5
10
IFSM
IRRM
IRSM
PARM
Tstg
Tj
dV/dt
Surge non repetitive forward current tp = 10 ms sinusoidal
150
Repetitive peak reverse current
tp = 2 µs square F = 1 kHz
1
Non repetitive peak reverse current tp = 100 µs square
2
Repetitive peak avalanche power tp = 1 µs Tj = 25°C
2700
Storage temperature range
-65 to + 150
Maximum operating junction temperature (1)
150
Critical rate of rise of reverse voltage
10000
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j-------a----)
condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink
Table 2. Thermal resistances
Symbol
Parameter
Value
Rth(j-c)
Rth (c)
Junction to case
Rth(j-c)
Rth (c)
Junction to case
TO-220AB / D2PAK /
I2PAK
TO-220FPAB
Per diode
Total
Coupling
Per diode
Total
Coupling
3
1.7
0.35
5
3.8
2.5
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Unit
V
A
A
A
A
A
A
W
°C
°C
V/µs
Unit
°C/W
°C/W
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
Test Conditions
IR(1) Reverse leakage current
VF(1) Forward voltage drop
1. Pulse test: tp = 380 µs, δ < 2%
Tj = 25° C
Tj = 100° C
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
VR = VRRM
IF = 5 A
IF = 5 A
IF = 10 A
IF = 10 A
To evaluate the conduction losses use the following equation:
P = 0.33 x IF(AV) + 0.026 IF2(RMS)
Min.
Typ.
45
0.36
0.49
Max.
0.15
90
0.53
0.46
0.67
0.59
Unit
mA
mA
V
2/10





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