Schottky rectifier. STPS10L40C Datasheet

STPS10L40C rectifier. Datasheet pdf. Equivalent

STPS10L40C Datasheet
Recommendation STPS10L40C Datasheet
Part STPS10L40C
Description Low drop power Schottky rectifier
Feature STPS10L40C; STPS10L40C Low drop power Schottky rectifier Datasheet - production data A1 K A2 K A2 K A1 TO-22.
Manufacture STMicroelectronics
Datasheet
Download STPS10L40C Datasheet




STMicroelectronics STPS10L40C
STPS10L40C
Low drop power Schottky rectifier
Datasheet - production data
A1
K
A2
K
A2
K
A1
TO-220AB
KK
A2
A1
D2PAK
A2
A1
Features
Low forward voltage drop meaning very
small conduction losses
Low dynamic losses as a result of the
schottky barrier
Avalanche capability specified
ECOPACK®2 compliant component for
D²PAK on demand
Description
Dual center tap Schottky rectifier suited for switch
mode power supply and high frequency DC to
DC converters.
Packaged either in TO-220AB and D2PAK, this
device is especially intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
Table 1: Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max.)
VF (typ.)
2x5A
40 V
150 °C
0.36 V
April 2016
DocID9433 Rev 7
This is information on a product in full production.
1/12
www.st.com



STMicroelectronics STPS10L40C
Characteristics
STPS10L40C
1 Characteristics
Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
Repetitive peak reverse voltage
Forward rms current
40 V
20 A
IF(AV)
Average forward current δ = 0.5,
square wave
TC = 140 °C
Per diode
Per device
5
10
A
IFSM
PARM
Tstg
Tj
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Storage temperature range
Maximum operating junction temperature (1)
150
190
-65 to +150
+150
A
W
°C
°C
Notes:
(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c)
Junction to case
Rth(c)
Coupling
Table 3: Thermal parameters
Parameter
Per diode
Total
-
Value
3.0
1.7
0.35
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
Symbol
IR(1)
VF(1)
Table 4: Static electrical characteristics (per diode)
Parameter
Test conditions
Min. Typ.
Reverse leakage current
Forward voltage drop
Tj = 25 °C
Tj = 100 °C
Tj = 25 °C
Tj = 100 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 5 A
IF = 5 A
IF = 10 A
IF = 10 A
-
-8
-
- 0.36
-
- 0.49
Max.
0.2
25
0.53
0.46
0.67
0.59
Unit
mA
mA
V
Notes:
(1)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.33 x IF(AV) + 0.026 IF2(RMS)
2/12 DocID9433 Rev 7



STMicroelectronics STPS10L40C
STPS10L40C
1.1 Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W)
3.5
3.0 δ= 0.05
δ = 0.1
δ= 0.2
δ = 0.5
2.5
2.0 δ =1
1.5
1.0 T
0.5
IF(AV)(A)
δ = tp/T tp
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Characteristics
Figure 2: Average forward current versus ambient
temperature (δ = 0.5, per diode)
IF(AV)(A)
6
Rth(j-a) = Rth(j-c)
5
4
Rth(j-a) = 15 °C/W
3
2
T
1
δ= tp/T tp
0
Tamb(°C)
0 25 50 75 100 125 150
Figure 3: Normalized avalanche power derating
versus pulse duration (Tj = 125 °C)
PARM(t p )
1 PARM(10 µs)
0.1
Figure 4: Relative variation of thermal impedance
junction to case versus pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.8
δ= 0.5
0.6
0.01
0.001
1
0.4 δ = 0.2
δ = 0.1
T
0.2
t p(µs)
single pulse
tp(s )
δ = tp/T tp
10
100
1000
0.0
1E-3 1E-2 1E-1 1E+0
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
IR(mA)
1E+2
Tj = 150 °C
1E+1
Tj = 100 °C
Figure 6: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
1000
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
1E+0
1E-1
1E-2
1E-3
0
Tj = 25 °C
100
VR(V)
10
5 10 15 20 25 30 35 40
1
2
VR(V)
5 10
20
50
DocID9433 Rev 7
3/12







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