Schottky Rectifier. STPS10L60 Datasheet

STPS10L60 Rectifier. Datasheet pdf. Equivalent

STPS10L60 Datasheet
Recommendation STPS10L60 Datasheet
Part STPS10L60
Description Power Schottky Rectifier
Feature STPS10L60; STPS10L60 Datasheet 60 V power Schottky rectifier AK K TO-220AC A K Features • Low forward volta.
Manufacture STMicroelectronics
Datasheet
Download STPS10L60 Datasheet




STMicroelectronics STPS10L60
STPS10L60
Datasheet
60 V power Schottky rectifier
AK
K
TO-220AC
A
K
Features
• Low forward voltage drop
• Negligible switching losses
• Low thermal resistance
• Avalanche capability specified
• ECOPACK®2 compliant
Applications
• Switching diode
• SMPS
• DC/DC converter
• Lighting
Description
This Schottky rectifier is designed for switched mode power supplies (SMPS) and
high frequency DC to DC converters.
Packaged in TO-220AC, the STPS10L60 is optimized for use in DC/DC converters.
Product status link
STPS10L60
Product summary
Symbol
Value
IF(AV)
10 A
VRRM
60 V
Tj (max.)
150 °C
VF (typ.)
0.48 V
DS1593 - Rev 5 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com



STMicroelectronics STPS10L60
STPS10L60
Characteristics
1 Characteristics
Table 1. Absolute ratings (limiting values, at 25 °C unless otherwise specified)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV)
Average forward current
Tc = 135 °C, δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
60
30
10
220
417
-65 to +175
150
Unit
V
A
A
A
W
°C
°C
Symbol
Rth(j-c)
Table 2. Thermal resistance parameters
Parameter
Junction to case
Max. value
1.6
Unit
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
IR(1) Reverse leakage current
VF(2)
Forward voltage drop
1. tp = 5 ms, δ < 2%
2. tp = 380 μs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 10 A
Tj = 25 °C
Tj = 125 °C
IF = 20 A
Min. Typ. Max.
- 350
- 65 95
- 0.60
- 0.48 0.56
- 0.74
- 0.62 0.70
To evaluate the conduction losses, use the following equation:
P = 0.42 x IF(AV) + 0.014 x IF2(RMS).
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
Unit
µA
mA
V
DS1593 - Rev 5
page 2/9



STMicroelectronics STPS10L60
STPS10L60
Characteristics (curves)
1.1 Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current
PF(AV) (W)
8
7
δ = 0.05
6
5
4
3
2
1
0
0 1234
δ = 0.1
δ = 0.2
IF(AV) (A)
567
8
δ = 0.5
δ=1
T
δ=tp/T
tp
9 10 11 12
Figure 2. Average forward current versus ambient
temperature (δ = 0.5)
IF(AV) (A)
12
10
Rth(j-a)=Rth(j-c)
8
6
4
T
2
δ=tp/T
0
tp
Tamb (° C)
0 25 50 75 100 125 150
Figure 3. Normalized avalanche power derating versus
pulse duration (Tj = 125 °C)
PARM (t p )
1 PARM(10 µs)
Figure 4. Relative variation of thermal impedance junction
to case versus pulse duration
Zth(j-c)/Rth (j-c)
1. 0
0. 8
0.1
0. 6
0.01
0.001
1
0. 4
0. 2
t p(µs)
0. 0
Single pulse
tp (s)
10 100 1000
1E -4
1E -3
1E -2
1E -1
1E +0
DS1593 - Rev 5
page 3/9







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