Document
STPS10L60C
Power Schottky rectifier
Features
■ Low forward voltage drop ■ Negligible switching losses ■ Insulated package:
– Insulating voltage = 2000 V DC – Capacitance = 12 pF ■ Avalanche capability specified
Description
Dual center tap Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters.
Packaged in TO-220FPAB, this device is intended for use in high frequency inverters.
A1 K
A2
A2 K A1
TO-220FPAB STPS10L60CFP
Table 1. Device summary IF(AV) VRRM Tj (max) VF (max)
2x5A 60 V
150 °C 0.52 V
May 2011
Doc ID 6426 Rev 5
1/7
www.st.com
7
Characteristics
1 Characteristics
STPS10L60C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current
IF(AV) Average forward current
IFSM IRRM PARM
Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power
TC = 130 °C Per diode
δ = 0.5
Per device
tp = 10 ms Sinusoidal
tp = 2 µs square F=1 kHz
tp = 1 µs Tj = 25 °C
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
dV/dt Critical rate of rise reverse voltage
1.
d----P-----t--o----t dTj
<
R-----t--h----(-1--j---–----a----)
thermal runaway condition for a diode on its own heatsink
Table 3. Thermal resistance
60 30 5 10 180 1
4000
-65 to + 175 150
10000
V A
A
A A W
°C °C V/µs
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
Per diode Total
Rth (c)
Coupling
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
4.5 3.5
2.5
° C/W ° C/W
Table 4. Symbol
Static electrical characteristics (per diode)
Parameter
Tests Conditions
Min. Typ. Max.
Unit
IR (1)
Reverse leakage current
Tj = 25 °C Tj = 125 °C
VR = VRRM
Tj = 25 °C
IF = 5 A
VF (1) Forward voltage drop
Tj = 125 °C Tj = 25 °C
IF = 5 A IF = 10 A
Tj = 125 °C
IF = 10 A
1. Pulse test : tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.44 x IF(AV) + 0.0091x IF2(RMS)
220 45 60
0.55 0.43 0.52
0.67 0.55 0.64
µA mA
V
2/7 Doc ID 6426 Rev 5
STPS10L60C
Characteristics
Figure 1.
Average forward power dissipation Figure 2. versus average forward current (per diode)
Average forward current versus ambient temperature (δ = 0.5) (per diode)
PF(AV)(W)
3.5
3.0 δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
IF(AV)(A)
6
5
2.5
δ=1
4
2.0
3
1.5
2 1.0 T T
0.5 1
IF(AV)(A)
δ=tp/T
tp
δ=tp/T
tp
0.0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
0
25
50
Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W
Tamb(°C)
75
100
125
150
Figure 3. Normalized avalanche power derating versus pulse duration
Figure 4.
Normalized avalanche power derating versus junction temperature
PARM(tp) PARM(1 µs)
1
0.1
0.01
0.001 0.01
0.1
tp(µs)
1 10
PARM(Tj)
PARM(25 °C)
1.2
1
0.8
0.6
0.4
0.2
100 1000
0 25
50
Tj(°C)
75 100 125 150
Figure 5.
Non repetitive surge peak forward Figur.