Schottky Rectifier. STPS10L60C Datasheet

STPS10L60C Rectifier. Datasheet pdf. Equivalent

Part STPS10L60C
Description Power Schottky Rectifier
Feature STPS10L60C Power Schottky rectifier Features ■ Low forward voltage drop ■ Negligible switching loss.
Manufacture STMicroelectronics
Datasheet
Download STPS10L60C Datasheet



STPS10L60C
STPS10L60C
Power Schottky rectifier
Features
Low forward voltage drop
Negligible switching losses
Insulated package:
– Insulating voltage = 2000 V DC
– Capacitance = 12 pF
Avalanche capability specified
Description
Dual center tap Schottky rectifier suited for switch
mode power supplies and high frequency DC to
DC converters.
Packaged in TO-220FPAB, this device is intended
for use in high frequency inverters.
A1
K
A2
A2
K
A1
TO-220FPAB
STPS10L60CFP
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
VF (max)
2x5A
60 V
150 °C
0.52 V
May 2011
Doc ID 6426 Rev 5
1/7
www.st.com
7



STPS10L60C
Characteristics
1 Characteristics
STPS10L60C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current
IFSM
IRRM
PARM
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
TC = 130 °C Per diode
δ = 0.5
Per device
tp = 10 ms Sinusoidal
tp = 2 µs square F=1 kHz
tp = 1 µs Tj = 25 °C
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
dV/dt Critical rate of rise reverse voltage
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j-------a----)
thermal runaway condition for a diode on its own heatsink
Table 3. Thermal resistance
60
30
5
10
180
1
4000
-65 to +
175
150
10000
V
A
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
Per diode
Total
Rth (c)
Coupling
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
4.5
3.5
2.5
° C/W
° C/W
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
Tests Conditions
Min. Typ. Max.
Unit
IR (1)
Reverse leakage current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
IF = 5 A
VF (1) Forward voltage drop
Tj = 125 °C
Tj = 25 °C
IF = 5 A
IF = 10 A
Tj = 125 °C
IF = 10 A
1. Pulse test : tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.44 x IF(AV) + 0.0091x IF2(RMS)
220
45 60
0.55
0.43 0.52
0.67
0.55 0.64
µA
mA
V
2/7 Doc ID 6426 Rev 5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)