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STPS10L60C Dataheets PDF



Part Number STPS10L60C
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Power Schottky Rectifier
Datasheet STPS10L60C DatasheetSTPS10L60C Datasheet (PDF)

STPS10L60C Power Schottky rectifier Features ■ Low forward voltage drop ■ Negligible switching losses ■ Insulated package: – Insulating voltage = 2000 V DC – Capacitance = 12 pF ■ Avalanche capability specified Description Dual center tap Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220FPAB, this device is intended for use in high frequency inverters. A1 K A2 A2 K A1 TO-220FPAB STPS10L60CFP Table 1. Device summary IF(AV) VRRM.

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STPS10L60C Power Schottky rectifier Features ■ Low forward voltage drop ■ Negligible switching losses ■ Insulated package: – Insulating voltage = 2000 V DC – Capacitance = 12 pF ■ Avalanche capability specified Description Dual center tap Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220FPAB, this device is intended for use in high frequency inverters. A1 K A2 A2 K A1 TO-220FPAB STPS10L60CFP Table 1. Device summary IF(AV) VRRM Tj (max) VF (max) 2x5A 60 V 150 °C 0.52 V May 2011 Doc ID 6426 Rev 5 1/7 www.st.com 7 Characteristics 1 Characteristics STPS10L60C Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current IFSM IRRM PARM Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power TC = 130 °C Per diode δ = 0.5 Per device tp = 10 ms Sinusoidal tp = 2 µs square F=1 kHz tp = 1 µs Tj = 25 °C Tstg Storage temperature range Tj Maximum operating junction temperature(1) dV/dt Critical rate of rise reverse voltage 1. d----P-----t--o----t dTj < R-----t--h----(-1--j---–----a----) thermal runaway condition for a diode on its own heatsink Table 3. Thermal resistance 60 30 5 10 180 1 4000 -65 to + 175 150 10000 V A A A A W °C °C V/µs Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode Total Rth (c) Coupling When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 4.5 3.5 2.5 ° C/W ° C/W Table 4. Symbol Static electrical characteristics (per diode) Parameter Tests Conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C Tj = 125 °C VR = VRRM Tj = 25 °C IF = 5 A VF (1) Forward voltage drop Tj = 125 °C Tj = 25 °C IF = 5 A IF = 10 A Tj = 125 °C IF = 10 A 1. Pulse test : tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.44 x IF(AV) + 0.0091x IF2(RMS) 220 45 60 0.55 0.43 0.52 0.67 0.55 0.64 µA mA V 2/7 Doc ID 6426 Rev 5 STPS10L60C Characteristics Figure 1. Average forward power dissipation Figure 2. versus average forward current (per diode) Average forward current versus ambient temperature (δ = 0.5) (per diode) PF(AV)(W) 3.5 3.0 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 IF(AV)(A) 6 5 2.5 δ=1 4 2.0 3 1.5 2 1.0 T T 0.5 1 IF(AV)(A) δ=tp/T tp δ=tp/T tp 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 25 50 Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W Tamb(°C) 75 100 125 150 Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature PARM(tp) PARM(1 µs) 1 0.1 0.01 0.001 0.01 0.1 tp(µs) 1 10 PARM(Tj) PARM(25 °C) 1.2 1 0.8 0.6 0.4 0.2 100 1000 0 25 50 Tj(°C) 75 100 125 150 Figure 5. Non repetitive surge peak forward Figur.


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