N-Channel MOSFET. ZVN3310F Datasheet

ZVN3310F MOSFET. Datasheet pdf. Equivalent

Part ZVN3310F
Description N-Channel MOSFET
Feature Product Summary VDS (V) RDS(ON) (Ω) 100 10 Description and Applications This MOSFET utilises a str.
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Datasheet
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ZVN3310F
Product Summary
VDS (V)
RDS(ON) ()
100
10
Description and Applications
This MOSFET utilises a structure that combines low input
capacitance with relatively low on-resistance and has an intrinsically
higher pulse current handling capability in linear mode than a
comparable trench technology structure. This MOSFET is suitable for
general purpose applications.
General purpose 100V FET
Power management
Disconnect switches
Telecoms
Complementary Type – ZVP3310F
A Product Line of
Diodes Incorporated
ZVN3310F
100V N-CHANNEL ENHANCEMENT MODE MOSFET
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Features and Benefits
High pulse current handling in linear mode
Low input capacitance
Fast switching speed
Lead Free By Design/RoHS Compliant (Note 1)
Mechanical Data
Case: SOT-23
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
TOP VIEW
SOT-23
D
GS
TOP VIEW
Pin Out Configuration
Drain
Gate
Source
Equivalent Circuit
Ordering Information (Note 2)
Product
ZVN3310FTA
Marking
MF
Reel size (inches)
7
Tape width (mm)
8
Notes:
1. No purposefully added lead.
2. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Quantity per reel
3000
Marking Information
MF MF = Product Type Marking Code
ZVN3310F
Document Number DS31980 Rev. 4 - 2
1 of 5
www.diodes.com
October 2009
© Diodes Incorporated



ZVN3310F
A Product Line of
Diodes Incorporated
ZVN3310F
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Symbol
VDSS
VGSS
ID
IDM
Value
100
±20
100
2
Units
V
V
mA
A
Thermal Characteristics
Characteristic
Power Dissipation @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
TJ, TSTG
Value
330
-55 to +150
Unit
mW
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
100
Zero Gate Voltage Drain Current
TJ = 25°C
TJ = 125°C (Note 4)
IDSS
1
50
Gate-Source Leakage
IGSS
20
Gate Threshold Voltage
ON CHARACTERISTICS (Note 3)
VGS(th)
0.8
2.4
On-State Drain Current
ID (ON)
500
Static Drain-Source On-Resistance
DYNAMIC CHARACTERISTICS (Note 4)
RDS (ON)
10
Forward Transconductance (Note 3)
gfs 100
Input Capacitance
Ciss ⎯ ⎯ 40
Output Capacitance
Coss
15
Reverse Transfer Capacitance
Crss
5
Turn-On Delay Time (Note 5)
tD(on)
3
5
Turn-On Rise Time (Note 5)
tr 5
7
Turn-Off Delay Time (Note 5)
tD(off)
4
6
Turn-Off Fall Time (Note 5)
tf 5 7
Notes:
3. Measured under pulsed conditions. Width = 300μs. Duty cycle 2%
4. Sample test.
5. Switching times measured with 50source impedance and <5ns rise time on a pulse generator.
Unit
V
μA
nA
V
mA
mS
pF
ns
Test Condition
ID = 1mA, VGS = 0V
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 1mA
VDS = 25V, VGS = 10V
VGS = 10V, ID = 500mA
VDS = 25V, ID = 500mA
VDS = 25V, VGS = 0V
f = 1.0MHz
VDD 25V, ID = 500mA
ZVN3310F
Document Number DS31980 Rev. 4 - 2
2 of 5
www.diodes.com
October 2009
© Diodes Incorporated





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