SRF10200C

MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Features * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 175℃ Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ＊In compliance with EU RoHs 2002/95/EC directives MAXIMUM RATINGS Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current ( Per diode ) Total Device (Rated VR),TC=100℃ VRRM VRWM VR VR(RMS) IF(AV) Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFM IFSM Operating and Storage Junction Temperature Range TJ , TSTG SRF10200C 200 140 5 10 10 125 -65 to +175 THERMAL RESISTANCES Typical Thermal Resistance junction to case Rθjc 4.2 ELECTRIAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage ( IF =5.0 Amp TC = 25℃) ( IF =5.0...