N-Channel MOSFET. SI2302A Datasheet

SI2302A MOSFET. Datasheet pdf. Equivalent

SI2302A Datasheet
Recommendation SI2302A Datasheet
Part SI2302A
Description N-Channel MOSFET
Feature SI2302A; MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
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Datasheet
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MCC SI2302A
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
SI2302A
Features
Halogen free available upon request by adding suffix "-HF"
20V,3.0A, RDS(ON)=55m¡@VGS=4.5V
RDS(ON)=82m¡@VGS=2.5V
High dense cell design for extremely low RDS(ON)
Rugged and reliable
Lead free product is acquired
SOT-23 Package
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
PD
R©JA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambientb
Operating Junction Temperature
Storage Temperature
Rating
20
3
10
±8
1.25
100
-55 to +150
-55 to +150
Internal Block Diagram
D
G
S
Unit
V
A
A
V
W
к/W
к
к
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
CB
2. SOURCE
3. DRAIN
12
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .104
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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1 of 5
2017/04/29



MCC SI2302A
MCC
R
Micro Commercial Components
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 10µA
VDS = 20V, VGS = 0V
VGS = 8V, VDS = 0V
VGS = -8V, VDS = 0V
20
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics d
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 50µA 0.65
1.2 V
VGS = 4.5V, ID = 3.6A
55 72 m
VGS = 2.5V, ID = 3.1A
82 110 m
VDS = 5V, ID = 3.6A
8.5 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
VDS = 10V, VGS = 0V,
f = 1.0 MHz
237
120
pF
pF
Crss 45 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 3.6A,
VGS = 4.5V, RGEN = 6
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 3.6A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
23 45 ns
11 30 ns
34 70 ns
36 70 ns
6 10 nC
1.4 nC
1.8 nC
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 0.94A
0.94
1.2
A
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Revision: A
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2017/04/29



MCC SI2302A
Electrical and Thermal Characteristics
10
VGS=4.5,3.5,2.5V
8
6
VGS=2.0V
4
2
VGS=1.5V
0
012345
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
600
500
400
300
Ciss
200
Coss
100
Crss
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
MCC
R
Micro Commercial Components
10
25 C
8
6
4
2
TJ=125 C
-55 C
0
0123
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=3.6A
1.9 VGS=4.5V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
Revision: A
www.mccsemi.com
3 of 5
2017/04/29







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