N-Channel MOSFET. P0760ZD Datasheet

P0760ZD MOSFET. Datasheet pdf. Equivalent

Part P0760ZD
Description N-Channel MOSFET
Feature P0760ZD N-Channel High Voltage Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 660mΩ @VGS = 1.
Manufacture UNIKC
Total Page 8 Pages
Datasheet
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P0760ZD
P0760ZD
N-Channel High Voltage Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
660mΩ @VGS = 10V
ID
7A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
7
4.4
21
2
Avalanche Energy3
EAS 80
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
48
19
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 40mH ,starting TJ = 25°C
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
2.6
UNITS
°C / W
REV 1.0
1 2017/2/13



P0760ZD
P0760ZD
N-Channel High Voltage Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
600
2 3.4
4
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100 nA
Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
1
mA
100
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 3.5A
580 660
Forward Transconductance1
gfs
VDS = 10V, ID = 3.5A
5S
DYNAMIC
Input Capacitance
Ciss
555
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
435
pF
9
Effective Output Capacitance4
Co(er)
VGS = 0V, VDS = 0 to 480V
33
Total Gate Charge2
Qg
19
Gate-Source Charge2
Qgs VDD = 480V, ID = 7A, VGS = 10V
3.2 nC
Gate-Drain Charge2
Qgd
9
Turn-On Delay Time2
td(on)
27
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 300V
ID = 7A, RG= 10Ω
52
nS
72
Fall Time2
tf
34
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
7A
Forward Voltage1
VSD IF = 7A, VGS = 0V
1.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 7A, dlF/dt = 100A / mS
245 nS
2.4 uC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
REV 1.0
2 2017/2/13





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