N-Channel MOSFET
P0760ZD
N-Channel High Voltage Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
660mΩ @VGS = 10V
ID 7A
TO-252
A...
Description
P0760ZD
N-Channel High Voltage Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
660mΩ @VGS = 10V
ID 7A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current3
TC = 25 °C TC = 100 °C
ID
IDM IAS
7 4.4 21 2
Avalanche Energy3
EAS 80
Power Dissipation
TC = 25 °C TC = 100 °C
PD
48 19
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 40mH ,starting TJ = 25°C
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM 62.5 2.6
UNITS °C / W
REV 1.0
1 2017/2/13
P0760ZD
N-Channel High Voltage Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA
600 2 3.4
4
V
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±30V
±100 nA
Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V , TC = 25 °C VDS = 480V, VGS = 0V , TC = 100 °C
1 mA
100
Drain-Source On-State Resistance1
RDS(ON)
VGS = 10V, ID = 3.5A
580 660 mΩ
Forward Transconductance1
gfs
VDS = 10V, ID ...
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