P0760ZD

P0760ZD N-Channel High Voltage Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 660mΩ @VGS = 10V ID 7A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 TC = 25 °C TC = 100 °C ID IDM IAS 7 4.4 21 2 Avalanche Energy3 EAS 80 Power Dissipation TC = 25 °C TC = 100 °C PD 48 19 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V , L = 40mH ,starting TJ = 25°C SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.5 2.6 UNITS °C / W REV 1.0 1 2017/2/13 P0760ZD N-Channel High Voltage Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS Gate Threshold Voltage VGS(th) VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA 600 2 3.4 4 V Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V , TC = 25 °C VDS = 480V, VGS = 0V , TC = 100 °C 1 mA 100 Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 3.5A 580 660 mΩ Forward Transconductance1 gfs VDS = 10V, ID ...