N-Channel MOSFET. P2206BK Datasheet

P2206BK MOSFET. Datasheet pdf. Equivalent

Part P2206BK
Description N-Channel MOSFET
Feature P2206BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
Download P2206BK Datasheet



P2206BK
P2206BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 22.5mΩ @VGS = 10V
ID
24A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
24
15
80
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
8
6.8
Avalanche Current
IAS 26
Avalanche Energy
L = 0.1mH
EAS
33.8
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
30
12
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
3.6
2.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
35
65
Junction-to-Case
Steady-State
RqJC
4.2
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.0
1 2017/2/10



P2206BK
P2206BK
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 8A
VGS = 10V , ID = 8A
VDS = 5V, ID = 8A
60
1.3 1.75 2.3
V
±100 nA
1
mA
10
19 30
16.5 22.5
35 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1039
123
82
1
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS =10V
VGS = 4.5V
Qgs
VDS = 30V, ID = 8A
23
13
nC
3.4
Gate-Drain Charge2
Qgd
7.6
Turn-On Delay Time2
td(on)
38
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 30V,
ID @ 8A, VGS = 10V, RGEN = 6Ω
22
100
nS
Fall Time2
tf
32
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
2.7 A
Forward Voltage1
VSD IF = 8A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 8A, dlF/dt = 100A / mS
20 nS
11 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2017/2/10





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