Document
P2206BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 22.5mΩ @VGS = 10V
ID 24A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
24 15 80
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
8 6.8
Avalanche Current
IAS 26
Avalanche Energy
L = 0.1mH
EAS
33.8
Power Dissipation
TC = 25 °C TC = 100 °C
PD
30 12
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
3.6 2.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2 Junction-to-Ambient2
t ≦10s Steady-State
RqJA RqJA
35 65
Junction-to-Case
Steady-State
RqJC
4.2
1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RqJA t ≦10s value.
UNITS °C / W
REV 1.0
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P2206BK
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance1 Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
RDS(ON) gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 8A VGS = 10V , ID = 8A VDS = 5V, ID = 8A
60 1.3 1.75 2.3
V
±100 nA
1 mA
10
19 30 mΩ 16.5 22.5
35 S
DYNAMIC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Ciss Coss Crss Rg
VGS = 0V, VDS = 25V, f = 1MHz VGS = 0V, VDS = 0V, f = 1MHz
1039 123 82
1
pF Ω
Total Gate Charge2 Gate-Source Charge2
Qg
VGS =10V VGS = 4.5V
Qgs
VDS = 30V, ID = 8A
23 13
nC 3.4
Gate-Drain Charge2
Qgd
7.6
Turn-On Delay Time2
td(on)
38
Rise Time2 Turn-Off Delay Time2
tr td(off)
VDS = 30V, ID @ 8A, VGS = 10V, RGEN = 6Ω
22 100
nS
Fall Time2
tf
32
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
2.7 A
Forward Voltage1
VSD IF = 8A, VGS = 0V
1.3 V
Reverse Recovery Time Reverse Recovery Charge
trr Qrr
IF = 8A, dlF/dt = 100A / mS
20 nS 11 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2%.
2Independent of operating temperature.
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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:3000pcs/Reel
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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
D.Label rule
(Label content)
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.