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P2206BK Dataheets PDF



Part Number P2206BK
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P2206BK DatasheetP2206BK Datasheet (PDF)

P2206BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ @VGS = 10V ID 24A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 24 15 80 Continuous Drain Current TA = 25 °C TA= 70 °C ID 8 6.8 Avalanche Current IAS 26 Avalanche Energy L = 0.1mH EAS 33..

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P2206BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ @VGS = 10V ID 24A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 24 15 80 Continuous Drain Current TA = 25 °C TA= 70 °C ID 8 6.8 Avalanche Current IAS 26 Avalanche Energy L = 0.1mH EAS 33.8 Power Dissipation TC = 25 °C TC = 100 °C PD 30 12 Power Dissipation3 TA = 25 °C TA = 70 °C PD 3.6 2.3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 35 65 Junction-to-Case Steady-State RqJC 4.2 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RqJA t ≦10s value. UNITS °C / W REV 1.0 1 2017/2/10 P2206BK N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RDS(ON) gfs VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V VDS = 48V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 55 °C VGS = 4.5V, ID = 8A VGS = 10V , ID = 8A VDS = 5V, ID = 8A 60 1.3 1.75 2.3 V ±100 nA 1 mA 10 19 30 mΩ 16.5 22.5 35 S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Ciss Coss Crss Rg VGS = 0V, VDS = 25V, f = 1MHz VGS = 0V, VDS = 0V, f = 1MHz 1039 123 82 1 pF Ω Total Gate Charge2 Gate-Source Charge2 Qg VGS =10V VGS = 4.5V Qgs VDS = 30V, ID = 8A 23 13 nC 3.4 Gate-Drain Charge2 Qgd 7.6 Turn-On Delay Time2 td(on) 38 Rise Time2 Turn-Off Delay Time2 tr td(off) VDS = 30V, ID @ 8A, VGS = 10V, RGEN = 6Ω 22 100 nS Fall Time2 tf 32 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 2.7 A Forward Voltage1 VSD IF = 8A, VGS = 0V 1.3 V Reverse Recovery Time Reverse Recovery Charge trr Qrr IF = 8A, dlF/dt = 100A / mS 20 nS 11 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2%. 2Independent of operating temperature. REV 1.0 2 2017/2/10 P2206BK N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/10 P2206BK N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/2/10 P2206BK N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/2/10 P2206BK N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2017/2/10 P2206BK N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/2/10 P2206BK N-Channel Enhancement Mode MOSFET D.Label rule (Label content) REV 1.0 8 2017/2/10 .


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